BSW52 datasheet, PDF - EEWORLD Datasheet

BSW52: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39; CategoryDiscrete semiconductor The transistor; File Size58KB，1 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39

Parameter Name	Attribute value
Maker	Micro Electronics
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.8 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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