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EDI8F32128C55BAC

Description
SRAM Module, 512KX8, 55ns, CMOS, PQMA64,
Categorystorage    storage   
File Size322KB,7 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

EDI8F32128C55BAC Overview

SRAM Module, 512KX8, 55ns, CMOS, PQMA64,

EDI8F32128C55BAC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerEDI [Electronic devices inc.]
Reach Compliance Codeunknown
Maximum access time55 ns
Other featuresCONFIGURABLE AS 128K X 32
I/O typeCOMMON
JESD-30 codeS-PQMA-C64
JESD-609 codee0
memory density4194304 bit
Memory IC TypeSRAM MODULE
memory width8
Number of functions1
Number of ports1
Number of terminals64
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX8
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC68,1.0SQ
Package shapeSQUARE
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height4.826 mm
Maximum standby current0.005 A
Minimum standby current4.5 V
Maximum slew rate0.36 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formC BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED

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