RMWP38001
37-40 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Description
The RMWP38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Power Amplifier for use in point to
point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction
with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset.
The RMWP38001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a
variety of power amplifier applications.
4 mil substrate
Small-signal gain 22 dB (typ.)
1dB compressed Pout 22 dBm (typ.)
Chip size 3.4 mm x 1.4 mm
Features
Absolute
Maximum
Ratings
Parameter
Positive DC voltage (+4V Typical)
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50
Ω
source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vdg
I
D
P
IN
T
C
T
stg
R
jc
Value
+6
8
483
+8
-30 to +85
-55 to +125
46
Unit
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C),
50
Ω
system,
Vd=+4 V,
Quiescent Current
Idq=250 mA
Parameter
Frequency Range
Gate Supply Voltage
1
(Vg)
Gain Small Signal at
Pin= -10 dBm
Gain Variation vs Frequency
Gain at 1 dB Compression
Power Output at 1 dB
Compression
Power Output Saturated:
Pin=+5 dBm
Drain Current at
Pin=-10 dBm
Drain Current at 1dB
Compression
Min
37
Typ
-0.5
Max
40
Unit
GHz
V
dB
dB
dB
dBm
dBm
mA
mA
Parameter
Drain Current at Saturated:
Pin=+5 dBm
Power Added Efficiency
(PAE): at P1dB
Input Return Loss
(Pin=-10 dBm)
Output Return Loss
(Pin=-10 dBm)
OIP3
Noise Figure
Detector Voltage
(Pout= +15 dBm)
(Bias Current =
0.02-0.05 mA)
Min
Typ
270
15
12
7
30
6
0.15
Max
Unit
mA
%
dB
dB
dBm
dB
V
18
22
4
21
22
21
23.5
250
280
Note:
1. Typical range of gate voltage is -2.0 to 0 V to set Idq of 250 mA.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMWP38001
37-40 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Application
Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Figure 1
Functional Block
Diagram
Drain Supply
Vd1
MMIC Chip
RF IN
Drain Supply
Vd2
Drain Supply
Vd3
Drain Supply
Vd4
Reference Detector Voltage
Vref (not connected to circuit)
RF OUT
Ground
(Back of Chip)
Gate Supply
Vg
Output Power
Detector Voltage Vdet
Note:
For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to
measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 3.4 mm x
1.4 mm. Back of chip is
RF and DC ground
Dimensions in mm
0.0
1.4
0.545
1.05
1.55
3.0375
3.4
1.4
0.8355
0.686
0.5365
0.8315
0.682
0.5325
0.0
0.0
0.376
3.4
0.0
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
RMWP38001
37-40 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Figure 3
Recommended
Application Schematic
Circuit Diagram
10,000pF
100pF L
L
100pF
Drain Supply
Vd=+4 V
L
10,000pF
L
L
100pF
L
Reference Detector
Voltage Vref
RF OUT
Detector Voltage
Vdet
L
Ground
(Back of Chip)
L
Gate Supply
Vg
100pF
100pF
R = 50 k Ohms
L
L
L = Bond Wire Inductance
L
Reference Detector
Bias Voltage
Vrefbias (typ. -2.5 V)
MMIC Chip
RF IN
R = 50kOhms
Detector Bias Voltage
VdetBias (typ. -2.5 V)
Note:
For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to
measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
Figure 4
Recommended
Assembly Diagram
Die-Attach
80Au/20Sn
100pF
5mil Thick
Alumina
50-Ohm
RF
Input
Vd
(Positive)
10,000pF
10,000pF
Reference Detector
Bias Voltage Vrefbias
50 K Ohms
Reference Detector
Voltage Vref
100pF
100pF
100pF
5 mil Thick
Alumina
50-Ohm
RF
Output
2 mil Gap
Vg
(Negative)
Notes:
1. Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
2. If output power level detection is not desired, do not make connection to detector bond pad.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Detector Voltage
50 K Ohms
Vdet
Detector Bias Voltage
Vdetbias
L< 0.015”
(2 Places)
RMWP38001
37-40 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Recommended
Procedure
for Biasing and
Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1:
Turn off RF input power.
Step 2:
Connect the DC supply grounds to the grounds
of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3:
Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4:
Adjust gate bias voltage to set the quiescent
current of Idq=250 mA.
Step 5:
After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6:
Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Performance
Data
RMWP38001, 38 GHz Power Amplifier Typical On-Wafer Measurements
I
DQ
= 250 mA V
DD
= 4 V
26
24
22
20
18
S
21
0
-2
S
22
-4
-6
S21 Mag (dB)
16
14
12
10
8
6
4
2
0
35
35.5
36
36.5
37
37.5
38
38.5
39
39.5
40
-10
-12
-14
S
11
-16
-18
-20
-22
-24
-26
Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
S
11
and S
22
Mag (dB)
-8
RMWP38001
37-40 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Performance
Data
30
Output Power at 1 dB Gain Compression (dBm)
RMWP38001 Typical On-Wafer Output Power at 1 dB Gain
Compression Measurements at I
DQ
= 290 mA V
DD
= 4.0
25
20
15
10
5
0
37
37.5
38
38.5
Frequency (GHz)
39
39.5
40
RMWP38001 38 GHz Power Amplifier. Typical Output IP
3
Performance in 50 Ohm Test Fixture.
I
DQ
= 290 mA, V
DD
= 4V. Tone Spacing = 1 MHz
50
45
40
35
Output IP3 (dBm)
30
Pout = 10 dBm/Tone
25
20
15
10
5
0
36.5
37
37.5
38
38.5
39
39.5
40
40.5
Upper Product Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Revised March 14, 2001
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
京公网安备 11010802033920号
EEWORLD
