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MMBT2907AWT/R7

Description
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size154KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBT2907AWT/R7 Overview

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

MMBT2907AWT/R7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)100 ns
Maximum opening time (tons)45 ns

MMBT2907AWT/R7 Preview

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Approve Sheet
Part Number: MMBT2907AW
:
MMBT2907AW
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
.004(.10)MIN.
60 Volts
POWER
225 mW
SOT-323
Unit: inch (mm)
PNP epitaxial silicon, planar design
Collector-emitter voltage VCE = -60V
Collector current IC = -600mA
In compliance with EU RoHS 2002/95/EC directives and with Halogen
Free
.056(1.40)
.047(1.20)
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
.006(.15)
.002(.05)
.004(.10)MAX.
Case: SOT-323
Terminals : Solderable per MIL-STD-750,Method 2026
Approx Weight: 0.0048 gram
Device Marking : M7A
.016(.40)
.008(.20)
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
Value
-60
-60
-5.0
-600
.044(1.1)
.035(0.9)
MECHANICAL DATA
Units
V
V
V
mA
V
C E O
V
C B O
V
E B O
I
C
THERMAL CHATACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Storage Temperature
Junction Temperaure
Thermal Resistance, Junction to Ambient
Symbol
Value
225
-55 to 150
-55 to 150
556
O
Units
mW
O
P
T O T
T
S T G
T
J
R
Θ
J A
O
C/W
Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in.
.087(2.2)
.078(2.0)
C
C
STAD-JUL.13.2006
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