High Voltage IGBT
w/ Diode
IXGH28N120BD1
IXGT28N120BD1
V
CES
=
I
C25
=
V
CE(sat)
≤
t
fi(typ)
=
1200V
50A
3.5V
170ns
TO-247AD (IXGH)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C100
I
F90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
T
C
T
C
T
C
= 25°C ( Chip Capability )
= 100°C
= 90°C
= 25°C, 1ms
Maximum Ratings
1200
1200
±20
±30
50
28
10
150
I
CM
= 120
0.8
•
V
CES
250
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
V
V
V
V
A
A
A
A
A
G = Gate
E = Emitter
Features
International Standard Packages
JEDEC TO-247AD & TO-268
IGBT and Anti-Parallel FRED for
Resonant Power Supplies
- Induction Heating
- Rice Cookers
MOS Gate Turn-On
Fast Recovery Expitaxial Diode (FRED)
- Soft Recovery with Low I
RM
Advantages
G
C
E
(TAB)
TO-268 (IXGT)
G
E
C (TAB)
V
GE
= 15V, T
J
= 125°C, R
G
= 5Ω
Clamped Inductive Load
T
C
= 25°C
C = Collector
TAB = Collector
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque (TO-247)
TO-247
TO-286
300
260
1.13/10
6
4
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250μA, V
CE
= V
GE
T
J
= 125°C, Note1
V
CE
= 0V, V
GE
= ±20V
I
C
= 28A, V
GE
= 15V, Note 2
T
J
= 125°C
V
CE
= V
CES
, V
GE
= 0V
Characteristic Values
Min.
Typ.
Max.
2.5
5.0
50
250
±100
2.9
2.8
3.5
V
μA
μA
nA
V
V
Saves Space (Two Devices in One
Package)
Easy to Mount with 1 Screw
(Isolated Mounting Screw Hole)
Reduces Assembly Time and Cost
Applications
•
Switch-Mode and Resonant-Mode
•
•
•
•
Power Supplies
Uninterruptible Power Supplies (UPS)
DC Choppers
AC Motor Speed Drives
DC Servo and Robot Drives
© 2009 IXYS CORPORATION, All Rights Reserved
DS98988G(08/09)
IXGH28N120BD1
IXGT28N120BD1
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
Inductive load, T
J
= 25°C
I
C
= 28A, V
GE
= 15V
V
CE
= 0.8
•
V
CES
, R
G
= 5Ω
Note 3
I
C
= 28A, V
GE
= 15V, V
CE
= 0.5
•
V
CES
I
C
= 28A, V
CE
= 10V, Note 2
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Characteristic Values
Min.
Typ.
Max.
15
23
1700
130
45
92
13
35
30
20
210
170
2.2
35
28
1.4
250
340
4.6
0.21
280
320
5.0
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.50 °C/W
°C/W
e
TO-247 (IXGH) Outline
1
2
3
∅
P
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Inductive load, T
J
= 125°C
I
C
= 28A, V
GE
= 15V
V
CE
= 0.8
•
V
CES
, R
G
= 5Ω
Note 3
(TO-247)
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXGT) Outline
Reverse Diode (FRED)
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
V
F
I
RM
t
rr
t
rr
R
thJC
I
F
= 10A, V
GE
= 0V, Note 2
I
F
= 10A, V
GE
= 0V,
-di
F
/dt = 400A/μs, V
R
= 600V
I
F
= 1A, V
GE
= 0V, -di
F
/dt = 100A/μs, V
R
= 30V
T
J
= 100°C
Characteristic Values
Min.
Typ.
Max.
3.2
2.3
14
120
40
2.5
V
V
A
ns
ns
°C/W
Notes:
1. Part must be heatsunk for high-temp I
CES
measurement.
2. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
3. Switching times & energy loses may increase for higher V
CE
(Clamp), T
J
or R
G
.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH28N120BD1
IXGT28N120BD1
Fig. 1. Output Characte ristics
@ 25
º
C
56
49
42
V
GE
= 15V
13V
11V
Fig. 2. Exte nde d Output Characte ris tics
@ 25
º
C
240
210
180
V
GE
= 17V
15V
13V
I
C
- Am
peres
I
C
- Am
peres
35
28
21
9V
150
120
90
60
30
9V
11V
7V
14
7
5V
0
1
1.5
2
2.5
3
3.5
4
4.5
5
0
7V
0
2
4
6
V
C E
- Volts
Fig. 3. Output Characteristics
@ 125
º
C
56
V
GE
= 15V
49
42
13V
11V
1.3
1.4
V
GE
= 15V
V
C E
- Volts
8
10
12
14
16
18
20
Fig. 4. De pe nde nce of V
CE(sat)
on
Te m pe rature
I
C
= 56A
V
C E (sat)
- Norm
alized
1.2
1.1
1.0
0.9
0.8
I
C
= 14A
I
C
= 28A
I
C
- Am
peres
35
28
21
14
7
0
1
1.5
2
2.5
9V
7V
5V
0.7
3
3.5
4
4.5
5
-50
-25
0
25
50
75
100
125
150
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Colle ctor-to-Em itter Voltage
vs. Gate-to-Em itte r voltage
8
T
J
= 25
º
C
7
100
90
80
Fig. 6. Input Adm ittance
I
C
- Am
peres
V
C E
- Volts
6
I
C
= 56A
28A
14A
70
60
50
40
30
20
10
T
J
= 125
º
C
25
º
C
-40
º
C
5
4
3
2
6
7
8
9
10
0
V
G E
- Volts
11
12
13
14
15
16
17
4
5
6
V
G E
- Volts
7
8
9
10
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH28N120BD1
IXGT28N120BD1
Fig. 8. Dependence of Turn-off
Fig. 7. Transconductance
35
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70
80
90
100
T
J
= -40
º
C
25
º
C
125
º
C
18
16
14
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 960V
I
C
= 56A
Energy Loss on R
G
E
o f f
- m
illiJoules
g
f s
- Siem
ens
12
10
8
6
4
2
0
I
C
= 28A
I
C
= 14A
I
C
- Amperes
Fig. 9. Dependence of Turn-Off
10
9
8
R
G
= 5Ω
V
GE
= 15V
0
10
20
30
R
G
- Ohms
40
50
60
70
80
90
100
Energy Loss on I
C
T
J
= 125
º
C
11
10
9
Fig. 10. Depende nce of Turn-off
Energy Loss on Tem perature
R
G
= 5Ω
V
GE
= 15V
V
CE
= 960V
I
C
= 56A
E
o f f
- M
illiJoules
7
6
5
4
3
2
1
0
10
E
o f f
- m
illiJoules
V
CE
= 960V
8
7
6
5
4
3
2
1
0
I
C
= 28A
T
J
= 25
º
C
I
C
= 14A
25
35
45
55
65
75
85
95
105 115 125
15
20
25
I
C
- Amperes
30
35
40
45
50
55
60
T
J
- Degrees Centigrade
Fig. 12. Dependence of Turn-off
450
Fig. 11. Dependence of Turn-off
1400
Sw itching Tim e on R
G
t
d(off)
Sw itching Tim e on I
C
Switching Tim - nanoseconds
e
1200
t
fi
- - - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 960V
Switching Tim - nanoseconds
e
400
350
300
250
200
150
100
T
J
= 125
º
C
t
d(off)
t
fi
- - - - - -
R
G
= 5Ω
V
GE
= 15V
V
CE
= 960V
1000
800
600
I
C
= 14A
I
C
= 28A
I
C
= 56A
T
J
= 25
º
C
400
200
0
10
20
30
R
G
- Ohms
40
50
60
70
80
90
100
10
15
20
25
I
C
- Amperes
30
35
40
45
50
55
60
IXYS reserves the right to change limits, test conditions and dimensions.
IXGH28N120BD1
IXGT28N120BD1
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
450
16
Fig. 14. Gate Charge
t
d(off)
Switching Time - nanoseconds
400
350
300
250
200
150
I
C
= 56A
100
25
35
45
55
65
75
85
95
105 115 125
I
C
= 14A
t
fi
- - - - - -
R
G
= 5Ω
V
GE
= 15V
V
CE
= 960V
I
C
= 56A
I
C
= 14A
14
12
V
CE
= 600V
I
C
= 28A
I
G
= 1
0mA
V
G E
- Volts
10
8
6
4
2
0
I
C
= 28A
T
J
- Degrees Centigrade
0
10
20
30
40
50
60
70
80
90
100
Q
G
- nanoCoulombs
Fig. 16. Reverse-Bias Safe
Operating Area
140
Fig. 15. Capacitance
10000
f = 1 MHz
C
ies
120
100
80
60
40
20
0
T
J
= 125
º
C
R
G
= 5Ω
dV/dT < 10V/ns
Capacitance - p F
C
oes
100
C
res
10
0
5
10
15
20
25
30
35
40
I
C
- Amperes
1000
V
C E
- Volts
100
300
500
700
900
1100
1300
V
C E
- Volts
Fig. 17. Maxim um Transient Therm al Resistance
1.00
R
( t h ) J C
- ºC / W
0.50
0.10
1
10
Pulse Width - milliseconds
100
1000
© 2009 IXYS CORPORATION, All Rights Reserved
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