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HY62V8200BLLT1-I-10

Description
Standard SRAM, 256KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32
Categorystorage    storage   
File Size148KB,10 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY62V8200BLLT1-I-10 Overview

Standard SRAM, 256KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

HY62V8200BLLT1-I-10 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeTSOP1
package instructionTSOP1,
Contacts32
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time100 ns
JESD-30 codeR-PDSO-G32
JESD-609 codee6
length18.4 mm
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
width8 mm
HY62V8200B Series
256Kx8bit CMOS SRAM
DESCRIPTION
The HY62V8200B is a high speed, low power and
2M bit CMOS SRAM organized as 262,144 words
by 8bit. The HY62V8200B uses high performance
CMOS process technology and designed for high
speed low power circuit technology. It is
particularly well suited for used in high density low
power system application. This device has a data
retention mode that guarantees data to remain
valid at a minimum power supply voltage of 2.0V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup( LL-part )
-. 2.0V(min) data retention
Standard pin configuration
-. 32-sTSOPI-8X13.4, 32-TSOPI -8X20
(Standard and Reversed)
Product
Voltage
Speed
Operation
No.
(V)
(ns)
Current/Icc(mA)
HY62V8200B
3.0~3.6
70/85/100
5
HY62V8200B-E 3.0~3.6
70/85/100
5
HY62V8200B-I
3.0~3.6
70/85/100
5
Note 1. Blank : Commercial, E : Extended, I : Industrial
2. Current value is max.
Standby
Current(uA)
25
25
25
Temperature
(°C)
0~70
-25~85(E)
-40~85(I)
PIN CONNECTION
A11
A9
A8
A13
/WE
CS2
A15
Vcc
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
/OE
A10
/CS1
DQ8
DQ7
DQ6
DQ5
DQ4
Vss
DQ3
DQ2
DQ1
A0
A1
A2
A3
A4
A5
A6
A7
A12
A14
A16
A17
Vcc
A15
CS2
/WE
A13
A8
A9
A11
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
DQ4
DQ5
DQ6
DQ7
DQ8
/CS1
A10
/OE
sTSOPI/TSOPI
(Standard)
sTSOPI/TSOPI
(Reversed)
PIN DESCRIPTION
Pin Name
/CS1
CS2
/WE
/OE
A0 ~ A17
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Chip Select 1
Chip Select 2
Write Enable
Output Enable
Address Input
Data Input/Output
Power(3.0V~3.6V)
Ground
A0
BLOCK DIAGRAM
ROW
DECODER
SENSE AMP
ADD INPUT BUFFER
I/O1
COLUMNDECODER
DATA I/O
BUFFER
MEMORY ARRAY
256K x 8
WRITE DRIVER
A17
I/O8
/CS1
/CS2
/WE
/OE
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 /Jun. 2000
Hyundai Semiconductor
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