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HY62V8200LT1-10I

Description
Standard SRAM, 256KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32
Categorystorage    storage   
File Size373KB,11 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY62V8200LT1-10I Overview

Standard SRAM, 256KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

HY62V8200LT1-10I Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeTSOP1
package instructionTSOP1,
Contacts32
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time100 ns
JESD-30 codeR-PDSO-G32
JESD-609 codee6
length18.4 mm
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
width8 mm
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