SST25VF020-20-4E-QA datasheet, PDF

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SST25VF020-20-4E-QA: DescriptionFlash, 2MX1, WSON-8; Categorystorage storage; File Size635KB，24 Pages; ManufacturerSilicon Laboratories Inc

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SST25VF020-20-4E-QA Overview

Flash, 2MX1, WSON-8

SST25VF020-20-4E-QA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Silicon Laboratories Inc
Parts packaging code	SON
package instruction	HVSON, SOLCC8,.25
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum clock frequency (fCLK)	20 MHz
Data retention time - minimum	100
Durability	100000 Write/Erase Cycles
JESD-30 code	R-XDSO-N8
JESD-609 code	e0
length	6 mm
memory density	2097152 bit
Memory IC Type	FLASH
memory width	1
Number of functions	1
Number of terminals	8
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-20 °C
organize	2MX1
Package body material	UNSPECIFIED
encapsulated code	HVSON
Encapsulate equivalent code	SOLCC8,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	240
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	0.8 mm
Serial bus type	SPI
Maximum standby current	0.000015 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	10
type	NOR TYPE
width	5 mm
write protect	HARDWARE/SOFTWARE

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2 Mbit / 4 Mbit SPI Serial Flash

SST25VF020 / SST25VF040

SST25VF020 / 0402Mb / 4Mb Serial Peripheral Interface (SPI) flash memory

Data Sheet

FEATURES:

• Single 2.7-3.6V Read and Write Operations

• Serial Interface Architecture

– SPI Compatible: Mode 0 and Mode 3

• 20 MHz Max Clock Frequency

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Read Current: 7 mA (typical)

– Standby Current: 8 µA (typical)

• Flexible Erase Capability

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

• Fast Erase and Byte-Program:

– Chip-Erase Time: 70 ms (typical)

– Sector- or Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 14 µs (typical)

• Auto Address Increment (AAI) Programming

– Decrease total chip programming time over

Byte-Program operations

• End-of-Write Detection

– Software Status

• Hold Pin (HOLD#)

– Suspends a serial sequence to the memory

without deselecting the device

• Write Protection (WP#)

– Enables/Disables the Lock-Down function of the

status register

• Software Write Protection

– Write protection through Block-Protection bits in

status register

• Temperature Range

– Commercial: 0°C to +70°C

– Industrial: -40°C to +85°C

– Extended: -20°C to +85°C

• Packages Available

– 8-lead SOIC 150 mil body width

for SST25VF020

– 8-lead SOIC 200 mil body width

for SST25VF040

– 8-contact WSON (5mm x 6mm)

PRODUCT DESCRIPTION

SST’s serial flash family features a four-wire, SPI-com-

patible interface that allows for a low pin-count package

occupying less board space and ultimately lowering total

system costs. SST25VF020/040 SPI serial flash memo-

ries are manufactured with SST’s proprietary, high perfor-

mance CMOS SuperFlash Technology. The split-gate

cell design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches.

The SST25VF020/040 devices significantly improve per-

formance, while lowering power consumption. The total

energy consumed is a function of the applied voltage, cur-

rent, and time of application. Since for any given voltage

range, the SuperFlash technology uses less current to

program and has a shorter erase time, the total energy

consumed during any Erase or Program operation is less

than alternative flash memory technologies. The

SST25VF020/040 devices operate with a single 2.7-3.6V

power supply.

The SST25VF020 devices are offered in an 8-lead SOIC

150 mil body width (SA) package. The SST25VF040

devices are offered in an 8-lead SOIC 200 mil body width

(S2A) package. All densities are offered in the 8-contact

WSON package. See Figure 1 for the pin assignments.

S71231-04-000

6/04

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

SST25VF020-20-4E-QA Related Products

	SST25VF020-20-4E-QA
Description	Flash, 2MX1, WSON-8
Is it Rohs certified?	incompatible
Maker	Silicon Laboratories Inc
Parts packaging code	SON
package instruction	HVSON, SOLCC8,.25
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum clock frequency (fCLK)	20 MHz
Data retention time - minimum	100
Durability	100000 Write/Erase Cycles
JESD-30 code	R-XDSO-N8
JESD-609 code	e0
length	6 mm
memory density	2097152 bit
Memory IC Type	FLASH
memory width	1
Number of functions	1
Number of terminals	8
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-20 °C
organize	2MX1
Package body material	UNSPECIFIED
encapsulated code	HVSON
Encapsulate equivalent code	SOLCC8,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	240
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	0.8 mm
Serial bus type	SPI
Maximum standby current	0.000015 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	10
type	NOR TYPE
width	5 mm
write protect	HARDWARE/SOFTWARE

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