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IS61QDB22M36A-250B3LI

Description
QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-165
Categorystorage    storage   
File Size485KB,29 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Environmental Compliance
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IS61QDB22M36A-250B3LI Overview

QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-165

IS61QDB22M36A-250B3LI Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIntegrated Silicon Solution ( ISSI )
package instructionTBGA, BGA165,11X15,40
Reach Compliance Codecompliant
Maximum access time0.45 ns
Maximum clock frequency (fCLK)250 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
length15 mm
memory density75497472 bit
Memory IC TypeQDR SRAM
memory width36
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Minimum standby current1.7 V
Maximum slew rate1 mA
Maximum supply voltage (Vsup)1.89 V
Minimum supply voltage (Vsup)1.71 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width13 mm
IS61QDB24M18A
IS61QDB22M36A
4Mx18, 2Mx36
72Mb QUAD (Burst 2) Synchronous SRAM
FEATURES
2Mx36 and 4Mx18 configuration available.
On-chip delay-locked loop (DLL) for wide data valid
window.
Separate read and write ports with concurrent read
and write operations.
Synchronous pipeline read with EARLY write
operation.
Double data rate (DDR) interface for read and write
input ports.
Fixed 2-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K#) for address and control
registering at rising edges only.
Two output clocks (C and C#) for data output control.
Two echo clocks (CQ and CQ#) that are delivered
simultaneously with data.
+1.8V core power supply and 1.5, 1.8V VDDQ, used
with 0.75, 0.9V VREF.
HSTL input and output levels.
Registered addresses, write and read controls, byte
writes, data in, and data outputs.
Full data coherency.
Boundary scan using limited set of JTAG 1149.1
functions.
Byte write capability.
Fine ball grid array (FBGA) package:
13mmx15mm and 15mmx17mm body size
165-ball (11 x 15) array
Programmable impedance output drivers via 5x
user-supplied precision resistor.
ADVANCED INFORMATION
SEPTEMBER 2010
DESCRIPTION
The
72Mb IS61QDB22M36A
and
IS61QDB24M18A
are
synchronous, high-performance CMOS static random access
memory (SRAM) devices. These SRAMs have separate I/Os,
eliminating the need for high-speed bus turnaround. The
rising edge of K clock initiates the read/write operation, and
all internal operations are self-timed. Refer to the
Timing
Reference Diagram for Truth Table
for a description of the
basic operations of these
QUAD (Burst of 2)
SRAMs.
The input address bus operates at double data rate. The
following are registered internally on the rising edge of the K
clock:
Read address
Read enable
Write enable
Byte writes
Data-in for early writes
The following are registered on the rising edge of the K#
clock:
Write address
Byte writes
Data-in for second burst addresses
Byte writes can change with the corresponding data-in to
enable or disable writes on a per-byte basis. An internal write
buffer enables the data-ins to be registered half a cycle
earlier than the write address. The first data-in burst is
clocked at the same time as the write command signal, and
the second burst is timed to the following rising edge of the
K# clock.
During the burst read operation, the data-outs from the first
bursts are updated from output registers of the second rising
edge of the C# clock (starting 1.5 cycles later after read
command). The data-outs from the second bursts are
updated with the third rising edge of the C clock. The K and
K# clocks are used to time the data-outs whenever the C and
C# clocks are tied high.
The device is operated with a single +1.8V power supply and
is compatible with HSTL I/O interfaces.
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. 00A
5/06/2010
1
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