DMT6009LK3
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
Max
10mΩ @ V
GS
= 10V
I
D
Max
T
C
= +25°
C
57A
51A
Features
Low R
DS(ON)
– Ensures On State Losses Are Minimized
Excellent Q
gd x
R
DS(ON
)
Product (FOM)
Advanced Technology for DC/DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCED INFORMATION
ADVANCED INFORMATION
60V
12.8mΩ @ V
GS
= 4.5V
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high- efficiency power management applications.
Power Management Functions
DC-DC Converters
Backlighting
Mechanical Data
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Top View
Pin Out Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMT6009LK3-13
Notes:
Case
TO252
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T6009L
YYWW
=Manufacturer’s Marking
T6009L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
DMT6009LK3
Document number: DS38207 Rev. 3 - 2
1 of 6
www.diodes.com
December 2015
© Diodes Incorporated
DMT6009LK3
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
T
A
= +25C
T
A
= +70C
T
C
= +25C
T
C
= +70C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Value
60
±16
13.3
10.6
57
46
80
90
20.3
20.6
Unit
V
V
A
A
A
A
A
mJ
ADVANCED INFORMATION
ADVANCED INFORMATION
Continuous Drain Current (Note 6) V
GS
= 10V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
JA
P
D
R
JC
T
J,
T
STG
Value
2.6
47
50
2.5
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
60
-
-
0.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.4
8.3
9.6
0.9
1,925
438
41
1.7
15.6
33.5
4.7
5.3
4.5
8.6
35.9
15.7
18.2
33.1
Max
-
1
±100
2
10
12.8
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 13.5A
V
GS
= 4.5V, I
D
= 11.5A
V
GS
= 0V, I
S
= 20A
V
DS
= 30V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 30V, I
D
= 13.5A
pF
Ω
nC
ns
V
DD
= 30V, V
GS
= 10V,
R
G
= 6Ω, I
D
= 13.5A
ns
nC
I
F
= 13.5A, di/dt = 400A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT6009LK3
Document number: DS38207 Rev. 3 - 2
2 of 6
www.diodes.com
December 2015
© Diodes Incorporated
DMT6009LK3
30.0
V
GS
=3.0V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
=3.5V
V
GS
=4.5V
V
GS
=10.0V
I
D
, DRAIN CURRENT (A)
V
GS
=4.0V
20.0
25
30
V
DS
=5V
20
ADVANCED INFORMATION
ADVANCED INFORMATION
15.0
15
125℃
150℃
5
85℃
25℃
-55℃
10.0
V
GS
=2.5V
10
5.0
0.0
0
0.5
1
1.5
2
2.5
V
DS,
DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
0
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
4
0.01
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.0095
0.009
0.0085
0.008
0.0075
0.007
0.0065
0.006
6
10
14
18
22
26
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.014
0.013
0.012
0.011
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0
5
25℃
-55℃
85℃
V
GS
= 10V
150℃
125℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
2
V
GS
=10V
V
GS
=4.5V
0.1
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.08
0.06
I
D
=13.5A
0.04
0.02
0
0
4
8
12
16
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
1.8
1.6
V
GS
=4.5V, I
D
=11.5A
1.4
1.2
1
V
GS
=10V, I
D
=13.5A
0.8
0.6
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
December 2015
© Diodes Incorporated
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
3 of 6
DMT6009LK3
www.diodes.com
Document number: DS38207 Rev. 3 - 2
-25
DMT6009LK3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.02
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2
0.016
V
GS
=4.5V, I
D
=11.5A
0.012
1.6
I
D
=1mA
ADVANCED INFORMATION
ADVANCED INFORMATION
1.2
I
D
=250μA
0.008
V
GS
=10V, I
D
=13.5A
0.8
0.004
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
0.4
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
f=1MHz
C
T
, JUNCTION CAPACITANCE (pF)
-25
30
10000
25
I
S
, SOURCE CURRENT (A)
V
GS
=0V, T
J
=125℃
20
V
GS
=0V, T
J
=150℃
15
V
GS
=0V, T
J
=85℃
V
GS
=0V, T
J
=25℃
5
V
GS
=0V, T
J
=-55℃
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
C
iss
1000
C
oss
10
100
C
rss
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
30
10
1000
R
DS(ON)
Limited
P
W
=100µs
I
D
, DRAIN CURRENT (A)
100
8
6
V
GS
(V)
V
DS
=30V, I
D
=13.5A
10
P
W
=1ms
1
P
W
=10ms
P
W
=100ms
T
J(Max)
= 150℃
P
W
=1s
T
A
= 25℃
Single Pulse
P
W
=10s
DUT on 1*MRP Board
DC
V
GS
= 10V
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
4
2
0.1
0
0
7
14
21
28
35
Q
g
(nC)
Figure 11. Gate Charge
0.01
DMT6009LK3
Document number: DS38207 Rev. 3 - 2
4 of 6
www.diodes.com
December 2015
© Diodes Incorporated
DMT6009LK3
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
1
10
R
θJC
(t)=r(t) * R
θJC
R
θJC
=2.5℃/W
Duty Cycle, D=t1 / t2
D=0.9
ADVANCED INFORMATION
ADVANCED INFORMATION
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E
b3
7° ± 1°
L3
c
A
D
L4
A2
H
e
b2(2x)
b(3x)
Gauge Plane
0.508
E1
D1
L
2.74REF
a
Seating Plane
A1
TO252 (DPAK)
Dim Min Max Typ
A
2.19 2.39 2.29
A1
0.00 0.13 0.08
A2
0.97 1.17 1.07
b
0.64 0.88 0.783
b2
0.76 1.14 0.95
b3
5.21 5.46 5.33
c
0.45 0.58 0.531
D
6.00 6.20 6.10
D1
5.21
-
-
e
-
-
2.286
E
6.45 6.70 6.58
E1
4.32
-
-
H
9.40 10.41 9.91
L
1.40 1.78 1.59
L3
0.88 1.27 1.08
L4
0.64 1.02 0.83
a
0°
10°
-
All Dimensions in mm
DMT6009LK3
Document number: DS38207 Rev. 3 - 2
5 of 6
www.diodes.com
December 2015
© Diodes Incorporated
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