HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
V
DSS
IXFK 110 N06
IXFK 105 N07
IXFK 110 N07
I
D25
R
DS(on)
6 mW
7 mW
6 mW
60 V 110 A
70 V 105 A
70 V 110 A
t
rr
£
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D130
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C, die capability
T
C
= 130°C, limited by external leads
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
N07
N06
N07
N06
Maximum Ratings
70
60
70
60
±20
±30
110
76
600
100
30
2
5
500
-55 ... +150
150
-55 ... +150
V
V
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
Nm/lb.in.
g
TO-264 AA (IXFK)
G
D
S
(TAB)
Features
• International standard packages
• JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
•
•
•
•
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
92802I (10/97)
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Terminal connection torque
300
0.9/6
-
10
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
N06
N07
60
70
2
V
V
V
nA
mA
mA
V
DSS
V
GS (th)
I
GSS
I
DSS
R
DS(on)
V
GS
V
DS
V
GS
V
DS
V
GS
= 0 V, I
D
= 1 mA
= V
GS
, I
D
= 8 mA
=
±20
V
DC
, V
DS
= 0
= 0.8 • V
DSS
=0V
4
±200
T
J
= 25°C
T
J
= 125°C
110N06/110N07
105N07
400
2
V
GS
= 10 V, I
D
= 0.5 • I
D25
Note 2
6 mW
7 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4
IXFK 110N06 IXFK 105N07 IXFK 110N07
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
60
80
9000
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
4000
2400
30
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1
W
(External),
60
100
60
480
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
60
240
TO-264 AA
TO-264 AA
0.15
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
BSC
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
TO-264 AA Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, Note 2
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
I
F
= 25 A
-di/dt = 100 A/ms,
V
R
= 50 V
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
110N06/110N07
105N07
110
105
440
420
1.7
150
250
0.7
9
A
A
A
A
V
ns
mC
A
V
GS
= 0 V
Repetitive; pulse width limited by T
JM
110N06/110N07
105N07
I
F
= 100 A, V
GS
= 0 V, Note 2
Note: 1. Pulse width limited by T
JM
2. Pulse test, t
£
300
ms,
duty cycle d
£
2 %
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXFK 110N06 IXFK 105N07 IXFK 110N07
175
150
600
V
GS
=10V
9V
8V
7V
6V
T
J
=25
O
C
T
J
= 25
O
C
500
V
GS
=10V
9V
8V
I
D
- Amperes
125
100
75
50
25
0
0.0
I
D
- Amperes
400
7V
5V
300
200
100
0
6V
5V
0.5
1.0
1.5
2.0
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
V
DS
- Volts
Figure 1. Output Characteristics at 25
O
C
600
V
DS
> 4R
DS(ON)
Figure 2. Extended Output Characteristics
80
Transconductance - Siemens
500
T
J
=150
O
C
70
60
50
40
30
20
10
0
0
V
GS
=10V
T
J
= 25
o
C
I
D
- Amperes
400
T
J
=25
O
C
T
J
= 100
o
C
300
200
100
0
2
4
6
T
J
=100
O
C
T
J
= 150
o
C
8
10
12
100
200
300
400
500
600
V
GS
- Volts
I
C
- Amperes
Figure 3. Admittance Curves
1.4
T
J
= 25 C
o
Figure 4. Transconductance vs. Drain Current
2.25
2.00
I
D
= 75A
V
GS
= 10V
R
DS(ON)
- Normalized
1.3
R
DS(ON)
- Normalized
500
600
1.2
1.1
1.0
0.9
0.8
0
100
200
300
400
V
GS
= 10V
V
GS
= 15V
1.75
1.50
1.25
1.00
0.75
0.50
-50 -25
0
25
50
75 100 125 150 175
I
D
- Amperes
T
J
- Degrees C
Figure 5. R
DS(on)
normalized to 0.5 I
D25
value
Figure 6. Normalized R
DS(on)
vs. Junction
Temperature
3-4
© 2000 IXYS All rights reserved
IXFK 110N06 IXFK 105N07 IXFK 110N07
16
14
12
V
DS
= 40V
I
D
= 38A
I
G
= 1mA
125
IXFK110
100
IXFK105
I
D
- Amperes
300
400
500
600
700
75
50
25
V
GS
- Volts
10
8
6
4
2
0
0
100
200
0
-50
-25
0
25
50
75
100 125 150
Gate Charge - nCoulombs
Case Temperature -
O
C
Figure 7. Gate Charge
12000
F = 1MHz
Figure 8. Drain Current vs. Case Temperature
400
T
J
=150
O
C
10000
p
8000
6000
Coss
I
D
- Amperes
Ciss
300
200
T
J
=25
O
C
T
J
=150
O
C
p
4000
2000
0
0
10
20
30
40
Crss
100
T
J
=100
O
C
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Volts
V
SD
- Volts
Figure 9. Capacitance Curves
10
0
Thermal Response - K/W
Figure 10. Source-Drain Voltage vs. Source Current
10
-1
10
-2
10
-3
10
-2
Time - Seconds
10
-1
10
0
Figure 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4-4
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