BSW67A
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
SILICON NPN
PLANAR TRANSISTOR
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
FEATURES
• V
CBO
= 120V
• V
CEO
= 120V
• I
C
= 1.0A
2.54
(0.100)
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
3
DESCRIPTION
45°
Underside View
TO39 PACKAGE (TO-205AD)
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
General Purpose NPN Transistor in a
Hermetic TO39 Package
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
I
C
I
CM
P
TOT
P
TOT
P
TOT
T
stg
T
j
R
θJC
R
θJA
Collector
–
Base Voltage (open emitter)
Collector
–
Emitter Voltage (open base)
Collector Current (d.c.)
Collector Current (peak value)
Total Device Dissipation @ T
amb
≤
45°C
Total Device Dissipation @ T
C
≤
25°C
Total Device Dissipation @ T
C
≤
100°C
Storage Temperature
Junction Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
120V
120V
1.0A
2A
0.7W
5W
2.85W
–65 to 200°C
200°C
35°C / W
220°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 7881
Issue 1
BSW67A
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
(BR)CEO*
V
(BR)CBO*
V
(BR)EBO*
I
CBO
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Test Conditions
I
B
= 0
I
E
= 0
I
C
= 0
I
E
= 0
I
E
= 0
I
B
= 0.01A
I
B
= 0.05A
I
B
= 0.15A
I
B
= 0.01A
I
B
= 0.05A
I
B
= 0.15A
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
I
C
= 100μA
I
E
= 100μA
V
CB
= 60V
V
CB
= 60V
T
amb
= 150°C
I
C
= 0.1A
Min.
120
120
6
Typ.
Max. Unit
V
V
V
0.1
50
0.15
0.5
1.0
0.9
1.1
1.2
V
V
μA
Collector – Emitter Breakdown Voltage I
C
= 10mA
V
CE(sat)*
Collector – Emitter Saturation Voltage
I
C
= 0.5A
I
C
= 1.0A
I
C
= 0.1A
V
BE(sat)*
Base – Emitter Saturation Voltage
I
C
= 0.5A
I
C
= 1.0A
I
C
= 0.1A
40
30
15
—
h
FE*
DC Current Gain
I
C
= 0.5A
I
C
= 1.0A
t* Pulse test tp = 300μs ,
δ ≤
1.5%
DYNAMIC CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
f
T
C
obo
C
ibo
t
on
t
off
Transition Frequency
Output Capacitance
Input Capacitance
Turn–On Time
Turn–Off Time
Test Conditions
I
C
= 100mA V
CE
= 20V
V
CB
= 10V
V
EB
= 0
I
C
= 0.5A
I
E
= 0
I
E
= 0
V
CC
= 20V
f = 35MHz
f = 1.0MHz
f = 1.0MHz
Min.
50
Typ.
Max. Unit
MHz
20
300
pF
pF
μs
0.3
1.0
I
B1
=- I
B2
= 0.05A
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 7881
Issue 1
ARM Technology
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