HY5V26EFP-5I datasheet, PDF - EEWORLD Datasheet

HY5V26EFP-5I: DescriptionSynchronous DRAM, 8MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54; Categorystorage storage; File Size511KB，12 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HY5V26EFP-5I Overview

Synchronous DRAM, 8MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	BGA
package instruction	TFBGA, BGA54,9X9,32
Contacts	54
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	4.5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	S-PBGA-B54
JESD-609 code	e1
length	8 mm
memory density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA54,9X9,32
Package shape	SQUARE
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.21 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	8 mm

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Document Title

4Bank x 2M x 16bits Synchronous DRAM

Revision History

Revision No.

1.0

1.1

History

First Version Release

Changed tOH(Only Symbol ‘H’): 2.5ns -> 2.7ns

Draft Date

Feb. 2005

Apr. 2005

Remark

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev. 1.1 / Apr. 2005

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