EEWORLDEEWORLDEEWORLD

Part Number

Search

V54C3128164VCK5I

Description
Synchronous DRAM, 8MX16, 4.5ns, CMOS, PBGA54, GREEN, PLASTIC, FBGA-54
Categorystorage    storage   
File Size689KB,56 Pages
ManufacturerProMOS Technologies Inc
Download Datasheet Parametric View All

V54C3128164VCK5I Overview

Synchronous DRAM, 8MX16, 4.5ns, CMOS, PBGA54, GREEN, PLASTIC, FBGA-54

V54C3128164VCK5I Parametric

Parameter NameAttribute value
MakerProMOS Technologies Inc
Parts packaging codeBGA
package instructionVFBGA,
Contacts54
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time4.5 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeS-PBGA-B54
length8 mm
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals54
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeSQUARE
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Certification statusNot Qualified
Maximum seat height1 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width8 mm
V54C3128(16/80/40)4VC
128Mbit SDRAM
3.3 VOLT, TSOP II / BGA PACKAGE
8M X 16, 16M X 8, 32M X 4
5
System Frequency (f
CK
)
Clock Cycle Time (t
CK3
)
Clock Access Time (t
AC3
) CAS Latency = 3
Clock Access Time (t
AC2
) CAS Latency = 2
200 MHz
5 ns
4.5 ns
4.5 ns
6
166 MHz
6 ns
5.4 ns
5.4 ns
7PC
143 MHz
7 ns
5.4 ns
5.4 ns
7
143 MHz
7 ns
5.4 ns
6 ns
Features
4 banks x 2Mbit x 16 organization
4 banks x 4Mbit x 8 organization
4 banks x 8Mbit x 4 organization
High speed data transfer rates up to 200 MHz
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
Single Pulsed RAS Interface
Data Mask for Read/Write Control
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence: Sequential or
Interleave
Programmable Burst Length:
1, 2, 4, 8, and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Random Column Address every CLK (1-N Rule)
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 4096 cycles/64 ms
Available in 54 Pin TSOP II, 54 Ball BGA, 60 Ball
BGA
LVTTL Interface
Single +3.3 V
±0.3
V Power Supply
Description
The V54C3128(16/80/40)4VC is a four bank Syn-
chronous DRAM organized as 4 banks x 2Mbit x 16,
4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The
V54C3128(16/80/40)4VC achieves high speed data
transfer rates up to 200 MHz by employing a chip
architecture that prefetches multiple bits and then
synchronizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
200 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
-40°C to 85°C
-40°C to 125°C
Package Outline
J/K/I
Access Time (ns)
5
Power
7
6
7PC
Std.
L
Temperature
Mark
Blank
I
E
V54C3128(16/80/40)4VC Rev. 1.1 November 2007
1

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1638  1455  655  837  2782  33  30  14  17  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号