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UF4003B0G

Description
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size425KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

UF4003B0G Overview

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

UF4003B0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionDO-41, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
UF4001 - UF4007
1.0AMP. Glass Passivated High Efficient Rectifiers
DO-41/DO-204AL
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
Low cost
Ultrafast recovery time for high efficiency
High efficiency, low VF
Low leakage current
High surge current capability
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: JEDEC DO-204AL molded plastic body over
passivated chip
Terminals: Pure tin plate, lead free, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode
Mounting Position: Any
High temperature soldering guaranteed: 260℃/10s
Weight: 0.34 grams
Ordering Information (example)
Part No.
UF4001
Package
DO-41
Packing
3K / AMMO box
INNER
TAPE
52mm
Packing code
A0
Packing code
(Green)
A0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum Reverse Current @ Rated VR
T
A
=25
T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θjA
R
θjL
T
J
T
STG
UF
4001
50
35
50
UF
4002
100
70
100
UF
4003
200
140
200
UF
4004
400
280
400
1
30
UF
4005
600
420
600
UF
4006
800
560
800
UF
4007
1000
700
1000
Unit
V
V
V
A
A
1.0
5
150
50
17
60
15
- 55 to + 150
- 55 to + 150
1.7
V
uA
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
75
nS
pF
O
C/W
O
O
C
C
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:I13
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