GT35J321
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR
SILICON N CHANNEL IGBT
GT35J321
Fourth-generation IGBT
Current Resonance Inverter Switching Applications
Enhancement mode
High speed: t
f
= 0.19
μs
(typ.) (I
C
= 50 A)
Low saturation voltage: V
CE (sat)
= 1.9 V (typ.) (I
C
= 50 A)
FRD included between emitter and collector
Toshiba package name: TO-3P(N)IS
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector−emitter voltage
Gate−emitter voltage
Collector current (DC)
@ Tc
=
100°C
@ Tc
=
25°C
Symbol
V
CES
V
GES
I
C
I
CP
DC
Pulse
@ Tc
=
100°C
@ Tc
=
25°C
I
F
I
FP
P
C
T
j
T
stg
Rating
600
±25
18
37
100
20
40
30
75
150
−55
to 150
Unit
V
V
A
A
A
1. GATE
2. COLLECTOR
3. EMITTER
Collector current (pulse)
Diode forward current
Collector power
dissipation
Junction temperature
Storage temperature range
JEDEC
JEITA
⎯
⎯
2-16F1A
W
°C
°C
TOSHIBA
Weight: 5.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R
th (j-c)
R
th (j-c)
Max
1.67
3.2
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Marking
TOSHIBA
Gate
Emitter
GT35J321
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2008-03-26
GT35J321
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Collector cut−off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Diode forward voltage
Reverse recovery time
Symbol
I
GES
I
CES
V
GE (OFF)
V
CE (sat)
C
ies
t
r
t
on
t
f
t
off
V
F
t
rr
I
F
= 15 A, V
GE
= 0 V
I
F
= 15 A, di / dt =
−100
A /
μs
Test Condition
V
GE
= ±25 V, V
CE
= 0 V
V
CE
= 600 V, V
GE
= 0 V
I
C
= 50 mA, V
CE
= 5 V
I
C
= 50 A, V
GE
= 15 V
V
CE
= 10 V, V
GE
= 0 V, f = 1 MHz
Resistive Load
V
CC
= 300 V, I
C
= 50 A
V
GG
= ±15 V, R
G
= 39
Ω
(Note 1)
Min
―
―
3.0
―
―
―
―
―
―
―
―
Typ.
―
―
―
1.9
2500
0.24
0.33
0.19
0.51
―
―
Max
±500
1.0
6.0
2.3
―
―
―
0.32
―
2.0
0.2
V
μs
μs
Unit
nA
mA
V
V
pF
Note 1: Switching time measurement circuit and input/output waveforms
V
GE
0
R
G
0
V
CC
0
V
CE
t
d (off)
R
L
I
C
90%
90%
10%
90%
10%
t
f
t
off
10%
t
r
t
on
2
2008-03-26
GT35J321
I
C
– V
CE
100
Common emitter
Tc
= −40°C
15
20
60
10
9
80
80
20
60
100
Common emitter
Tc
=
25°C
I
C
– V
CE
10
15
9
(A)
Collector current IC
Collector current IC
(A)
8
40
40
8
20
VGE
=
7 V
0
0
20
VGE
=
7 V
1
2
3
4
5
0
0
1
2
3
4
5
Collector-emitter voltage
VCE (V)
Collector-emitter voltage
VCE (V)
I
C
– V
CE
100
Common emitter
Tc
=
125°C
20
80
15
60
8
10
100
9
80
Common emitter
VCE
=
5 V
I
C
– V
GE
(A)
Collector current IC
Collector current IC
(A)
VGE
=
7 V
60
40
40
25
20
20
Tc
=
125°C
−40
0
0
1
2
3
4
5
0
0
2
4
6
8
10
Collector-emitter voltage
VCE (V)
Gate-emitter voltage
VGE (V)
V
CE (sat)
– Tc
4
Common emitter
Collector-emitter saturation voltage
V
CE
(sat) (V)
VGE
=
15 V
3
IC
=
100 A
70
2
50
30
10
1
0
−40
0
40
80
120
160
Case temperature Tc (°C)
3
2008-03-26
GT35J321
V
CE,
V
GE
– Q
G
500
Common emitter
RL
=
6
Ω
Tc
=
25°C
20
10000
C – V
CE
V
CE
(V)
400
V
GE
(V)
16
Cies
(pF)
Capacitance C
1000
Collector-emitter voltage
VCE
=
300 V
200
100
200
100
4
8
Gate-emitter voltage
300
12
100
Common emitter
VGE
=
0 V
f
=
1 MHz
Tc
=
25°C
10
1
10
100
Coes
Cres
1000
0
0
80
160
240
320
0
400
Gate charge Q
G
(nC)
Collector-emitter voltage V
CE
(V)
Switching Time – R
G
10
Common emitter
VCC
=
300 V
IC
=
50 A
VGG
= ±15
V
Tc
=
25°C
10
Switching Time – I
C
Common emitter
VCC
=
300 V
RG
=
39
Ω
VGG
= ±15
V
Tc
=
25°C
1
toff
ton
0.1
tr
tf
Switching time (μs)
1
tf
0.1
0.01
1
Switching time (μs)
1000
toff
ton
tr
10
100
0.01
0
10
20
30
40
50
60
Gate resistance
R
G
(Ω)
Collector current I
C
(A)
Safe Operating Area
1000
*:
Single non-repetitive
pulse Tc
=
25°C
Curves must be derated
linearly with increases in
temperature.
10
μs*
IC max
(continuous)
Reverse Bias SOA
1000
Tj
≤
125°C
VGG
=
20 V
(A)
(A)
IC max (pulsed)
*
100
10 ms*
100
RG
=
39
Ω
Collector current I
C
Collector current I
C
10000
10
10
100
μs*
1 ms*
1
DC operation
1
0.1
1
10
100
1000
0.1
1
10
100
1000
10000
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage V
CE
(V)
4
2008-03-26
GT35J321
I
C
max – Tc
Transient thermal impedance r
th
(t) (°C/W)
50
10
2
r
th (t)
– t
w
Tc
=
25°C
Maximum DC collector current I
C
max (A)
Common emitter
VGE
=
15 V
40
10
1
Diode stage
10
0
30
IGBT stage
20
10
−
1
10
10
−
2
0
25
50
75
100
125
150
10
−
3
10
−
5
10
−
4
10
−
3
10
−
2
10
−
1
10
0
10
1
10
2
Case temperature
Tc
(°C)
Pulse width
t
w
(s)
I
F
– V
F
50
50
I
rr
, t
rr
– I
F
500
300
I
rr
(A)
Common emitter
VGE = 0 V
40
(A)
Peak reverse recovery current
Forward current I
F
30
10
trr
5
3
Irr
100
20
25
Tc = 125°C
−40
0
0
0.4
0.8
1.2
1.6
2.0
50
30
Common emitter
di/dt =
−100
A/μs
VGE = 0 V
Tc = 25°C
4
8
12
16
10
20
10
1
0
Forward voltage V
F
(V)
Forward current I
F
(A)
C
j
– V
R
300
f
=
1 MHz
Tc
=
25°C
I
rr
, t
rr
– di/dt
I
rr
(A)
200
10
trr
8
Common collector
IF = 15 A
Tc = 25°C
C
j
(pF)
100
50
30
(ns)
Peak reverse recovery current
Junction capacitance
Reverse recovery time
t
rr
6
100
10
5
3
4
Irr
2
1
1
3
5
10
30
50
100
300 500
0
0
0
40
80
120
160
200
Reverse voltage
V
R
(V)
di/dt (A/μs)
5
2008-03-26
Reverse recovery time
t
rr
(ns)
30
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