HYM7V65401BLTQG-8 datasheet, PDF

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HYM7V65401BLTQG-8: DescriptionSynchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-144; Categorystorage storage; File Size238KB，14 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYM7V65401BLTQG-8 Overview

Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-144

HYM7V65401BLTQG-8 Parametric

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	MODULE
package instruction	DIMM, DIMM144,32
Contacts	144
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	125 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N144
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	144
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.008 A
Maximum slew rate	0.8 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL

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4Mx64 bits

PC100 SDRAM SO DIMM

based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh

HYM7V65401B Q-Series

DESCRIPTION

The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four

4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package

on a 144pin glass-epoxy printed circuit board. Three 0.1uF decoupling capacitors per each SDRAM are mounted on the

PCB.

The HYM7V65401B Q-Series are Small Outline Dual In-line Memory Modules suitable for easy interchange and addition

of 32Mbytes memory. The HYM7V65401B Q-Series are offering fully synchronous operation referenced to a positive

edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are

internally pipelined to achieve very high bandwidth.

FEATURES

•

PC100MHz support

•

144pin SDRAM SO DIMM

•

Serial Presence Detect with EEPROM

•

1.00” (25.40mm) Height PCB with Double Sided

components

•

Single 3.3

0.3V power supply

•

All devices pins are compatible with LVTTL interface

•

Data mask function by DQM

•

SDRAM internal banks : four banks

•

Module bank : one physical bank

•

Auto refresh and self refresh

•

4096 refresh cycles / 64ms

•

Programmable Burst Length and Burst Type

-. 1, 2, 4, 8, or Full Page for Sequential Burst

-. 1, 2, 4 or 8 for Interleave Burst

•

Programmable /CAS Latency

-. 2, 3 Clocks

ORDERING INFORMATION

PART NO.

HYM7V65401BTQG-8

HYM7V65401BTQG-10P

HYM7V65401BTQG-10S

HYM7V65401BLTQG-8

HYM7V65401BLTQG-10P

HYM7V65401BLTQG-10S

MAX.

FREQUENCY

125MHz

100MHz

125MHz

100MHz

4 Banks

Low Power

Normal

TSOP-II

Gold

INTERNAL

BANK

REF.

POWER

SDRAM

PACKAGE

PLATING

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not

assume any responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.2/Dec. 01

HYM7V65401BLTQG-8 Related Products

	HYM7V65401BLTQG-8	HYM7V65401BTQG-8	HYM7V65401BTQG-10P	HYM7V65401BLTQG-10P	HYM7V65401BTQG-10S	HYM7V65401BLTQG-10S
Description	Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-144
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32
Contacts	144	144	144	144	144	144
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	125 MHz	125 MHz	100 MHz	100 MHz	100 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64	64	64
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	144	144	144	144	144	144
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	4MX64	4MX64	4MX64	4MX64	4MX64	4MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096
self refresh	YES	YES	YES	YES	YES	YES
Maximum standby current	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A	0.008 A
Maximum slew rate	0.8 mA	0.8 mA	0.72 mA	0.72 mA	0.72 mA	0.72 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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