DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA804TC
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
×
2SC5004)
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
DESCRIPTION
The
µ
PA804TC has built-in two transistors which were developed for UHF.
FEATURES
• High f
T
: f
T
= 5.0 GHz TYP. (@ V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz)
• Flat-lead 6-pin thin-type ultra super minimold package
• Built-in 2 transistors (2
×
2SC5004)
ORDERING INFORMATION
Part Number
Package
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Supplying Form
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to
perforation side of the tape.
µ
PA804TC
µ
PA804TC-T1
Taping products
(3 kp/reel)
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µ
PA804TC. Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Note
Ratings
20
12
3
60
150 in 1 element
200 in 2 elements
Junction Temperature
Storage Temperature
T
j
T
stg
125
–55 to +125
˚C
˚C
Unit
V
V
V
mA
mW
Note
Mounted on 1.08 cm
2
×
1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. P14549EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999
µ
PA804TC
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product (1)
Feedback Capacitance
Insertion Power Gain (1)
Symbol
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
2
Conditions
V
CB
= 15 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 5 V, I
C
= 5 mA
Note 1
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
MIN.
–
–
60
3.0
–
5.0
TYP.
–
–
–
5.0
0.9
–
MAX.
100
100
200
–
1.2
–
GHz
pF
dB
Unit
nA
nA
Notes 1.
Pulse Measurement: PW
≤
350
µ
s, Duty Cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
72
60 to 120
GB
73
100 to 200
2
Data Sheet P14549EJ1V0DS00
µ
PA804TC
TYPICAL CHARACTERISTICS (T
A
= +25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
Total Power Dissipation P
T
(mW)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
24
V
CE
= 5 V
Collector Current I
C
(mA)
200
150
100
2 Elements in total
16
Per
Element
8
0
0
50
100
150
0
0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
14
12
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
100
V
CE
= 5 V
10
8
6
4
2
0
I
B
= 140
µ
A
I
B
= 120
µ
A
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 60
µ
A
I
B
= 40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
6
DC Current Gain h
FE
I
B
= 160
µ
A
10
0.1
1
10
100
Collector to Emitter Voltage V
CE
(V)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7.00
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
14.00
Insertion Power Gain
S
21e
2
(dB)
6.00
5.00
4.00
3.00
2.00
1.00
0.00
1
V
CE
= 5 V
f = 1 GHz
12.00
10.00
8.00
6.00
4.00
2.00
0.00
V
CE
= 5 V
f = 1 GHz
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
Data Sheet P14549EJ1V0DS00
3
µ
PA804TC
INSERTION POWER GAIN vs. FREQUENCY
25.0
Insertion Power Gain
S
21e
2
(dB)
NOISE FIGURE vs. COLLECTOR CURRENT
6.00
V
CE
= 5 V
f = 1 GHz
I
C
= 5 mA
Noise Figure NF (dB)
20.0
5.00
4.00
3.00
2.00
1.00
0.00
15.0
V
CE
= 5 V
10.0
V
CE
= 3 V
5.0
0.0
0.1
1.0
Frequency f (GHz)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
10.0
1
10
Collector Current I
C
(mA)
100
0.900
f = 1 MHz
Feedback Capacitance C
re
(pF)
0.800
0.700
0.600
0.500
0.400
0.300
0.200
0.100
0.000
1
10
Collector to Base Voltage V
CB
(V)
100
4
Data Sheet P14549EJ1V0DS00
Embedded System
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