K6F4008R2D Family
Document Title
CMOS SRAM
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0
1.0
Initial Draft
Finalized
- Errata correction
- Change for tWP: 55 to 50ns for 70ns product
- Change for tWHZ: 25 to 20ns for 70ns product
Errata correction
- Removed TTL Compatible’from Features
’
Draft Date
March 16, 2000
May 4, 2000
Remark
Preliminary
Final
1.01
October 25, 2001
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 1.01
October 2001
K6F4008R2D Family
FEATURES
•
•
•
•
•
•
CMOS SRAM
GENERAL DESCRIPTION
The K6F4008R2D families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
industrial temperature range and Chip Scale Package for user
flexibility of system design. The families also supports low data
retention voltage for battery back-up operation with low data
retention current.
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Process Technology: Full CMOS
Organization: 512K x8 bit
Power Supply Voltage: 1.65~2.2V
Low Data Retention Voltage: 1.0V(Min)
Three State Outputs
Package Type: 48-FBGA-6.10x8.50
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature
Vcc Range
Speed
Standby
(I
SB1
, Typ.)
0.5µA
Operating
(I
CC1
, Max)
2mA
PKG Type
K6F4008R2D-F
Industrial(-40~85°C)
1.65~2.2V
70
1)
/85ns
48-FBGA-6.10x8.50
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
A
A
0
I/O
5
I/O
6
V
SS
A
1
A
2
CS
2
WE
DNU
A
3
A
4
A
5
A
6
A
7
A
8
I/O
1
I/O
2
V
CC
Row
select
Memory array
1024 rows
512×8 columns
B
C
D
48(36)-FBGA
E
V
CC
I/O
7
I/O
8
A
9
OE
A
10
A
18
CS
1
A
11
A
17
A
16
A
12
A
15
A
13
V
SS
I/O
1
F
I/O
3
I/O
4
A
14
I/O
8
Data
cont
I/O Circuit
Column select
G
Data
cont
H
Name
Function
Name
Function
CS1
CS2
CS
1
, CS
2
Chip Select Inputs
OE
WE
A
0
~A
18
Output Enable Input
Write Enable Input
Address Inputs
I/O
1
~I/O
8
Data Inputs/Outputs
Vcc
Vss
DNU
Power
Ground
Do Not Use
WE
OE
Control
logic
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
-2-
Revision 1.01
October 2001
K6F4008R2D Family
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
K6F4008R2D-FF70
K6F4008R2D-FF85
Function
CMOS SRAM
48-FBGA, 70ns, 1.8/2.0V
48-FBGA, 85ns, 1.8/2.0V
FUNCTIONAL DESCRIPTION
CS
1
H
X
1)
L
L
L
CS
2
X
1)
L
H
H
H
OE
X
1)
X
1)
H
L
X
1)
WE
X
1)
X
1)
H
H
L
I/O
High-Z
High-Z
High-Z
Dout
Din
Mode
Deselected
Deselected
Output Disabled
Read
Write
Power
Standby
Standby
Active
Active
Active
1. X means don′t care (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.2 to V
CC
+0.3V
-0.2 to 2.6V
1.0
-65 to 150
-40 to 85
Unit
V
V
W
°C
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
-3-
Revision 1.01
October 2001
K6F4008R2D Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Note:
1. T
A
=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤20ns.
3. Undershoot: -1.0V in case of pulse width
≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CMOS SRAM
Symbol
Vcc
Vss
V
IH
V
IL
Min
1.65
0
1.4
-0.2
3)
Typ
1.8/2.0
0
-
-
Max
2.2
0
Vcc+0.2
2)
0.4
Unit
V
V
V
V
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply
Symbol
Test Conditions
V
IN
=Vss to Vcc
CS
1
=V
IH,
CS
2
=V
IL
or OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
I
IO
=0mA, CS
1
=V
IL,
CS
2
=V
IH
, WE=V
IH,
V
IN
=V
IH
or V
IL
Cycle time=1µs, 100%duty, I
IO
=0mA, CS
1
≤0.2V,
CS
2
≥Vcc-0.2V,
V
IN
≤0.2V
or V
IN
≥VCC-0.2V
Cycle time=Min, I
IO
=0mA, 100% duty,
CS
1
=V
IL
, CS
2
=V
IH,
VIN=V
IL
or V
IH
I
OL
= 0.1mA
I
OH
= -0.1mA
CS
1
=V
IH
, CS
2
=V
IL
, Other inputs=V
IH
or V
IL
CS
1
≥Vcc-0.2V,
CS
2
≥Vcc-0.2V(CS
1
controlled) or
CS
2
≤0.2V(CS
2
controlled), Other inputs=0~Vcc
Min
-1
-1
-
-
-
-
1.4
-
-
Typ
-
-
-
-
-
-
-
-
0.5
Max
1
1
1
2
15
0.2
-
0.3
8
1)
Unit
µA
µA
mA
mA
mA
V
V
mA
µA
I
LI
I
LO
I
CC
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
V
OL
V
OH
I
SB
I
SB1
1. Super low power product=4µA with special handling.
-4-
Revision 1.01
October 2001
K6F4008R2D Family
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level: 0.2 to Vcc-0.2V
Input rising and falling time: 5ns
Input and output reference voltage:0.9V
Output load (See right): C
L
=100pF+1TTL
C
L
=30pF+1TTL
CMOS SRAM
V
TM
3)
R
1
2)
C
L
1)
R
2
2)
1. Including scope and jig capacitance
2. R
1
=3070Ω
,
R
2
=3150Ω
3. V
TM
=1.8V
AC CHARACTERISTICS
(Vcc=1.65~2.2V, Industrial product: T
A
=-40 to 85°C)
Speed Bins
Parameter List
Symbol
Min
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Read
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
1. The parameter is measured with 30pF test load.
70ns
1)
Max
-
70
70
35
-
-
25
25
-
-
-
-
-
-
-
20
-
-
-
Min
85
-
-
-
10
5
0
0
10
85
70
0
70
60
0
0
35
0
5
85ns
Max
-
85
85
40
-
-
25
25
-
-
-
-
-
-
-
25
-
-
-
Units
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
70
-
-
-
10
5
0
0
10
70
60
0
60
50
0
0
30
0
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Symbol
VDR
IDR
tSDR
tRDR
Test Condition
CS
1
≥Vcc-0.2V
1)
Vcc=1.2V, CS
1
≥Vcc-0.2V
1)
See data retention waveform
Min
1.0
-
0
tRC
Typ
-
0.5
-
-
Max
2.2
4
2)
-
-
Unit
V
µA
ns
1. CS
1
≥Vcc-0.2V,
CS
2
≥Vcc-0.2V
(CS
1
controlled) or
CS
2
≤0.2V
(CS
2
controlled).
2. Super low power product=2µA with special handling.
-5-
Revision 1.01
October 2001
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