DATA SHEET
SILICON TRANSISTOR
µ
PA807T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
• Low Current, High Gain
|S
21e
|
2
= 9 dB TYP. @V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 8.5 dB TYP. @V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• A Super Mini Mold Package Adopted
• Built-in 2 Transistors (2
×
2SC5179)
2.0±0.2
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
1.3
ORDERING INFORMATION
PART NUMBER
QUANTITY
Loose products
(50 PCS)
Taping products
(3 KPCS/Reel)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
0.65
2
µ
PA807T
µ
PA807T-T1
0.65
3
0.9±0.1
pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
5
3
2
10
30 in 1 element
60 in 2 elements
150
–65 to +150
UNIT
V
V
V
mA
mW
PIN CONFIGURATION (Top View)
6
Q
1
0 to 0.1
NEC Sales Representative. (Unit sample quantity is 50
5
4
Q
2
1
2
3
Junction Temperature
Storage Temperature
T
j
T
stg
°C
°C
PIN CONNECTIONS
1. Collector (Q1) 4. Emitter (Q2)
2. Emitter (Q1)
5. Base (Q2)
3. Collector (Q2) 6. Base (Q1)
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P12153EJ2V0DS00 (2nd edition)
(Previous No. ID-3641)
Date Published November 1996 N
Printed in Japan
©
©
0.15
+0.1
–0
Remark
If you require an evaluation sample, please contact an
0.7
4
5
0.2
+0.1
–0
1
6
X Y
1995
1994
µ
PA807T
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feed-back Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
h
FE
Ratio
SYMBOL
I
CBO
I
EBO
h
FE
f
T
f
T
C
re
|S
21e
|
2
|S
21e
|
2
NF
NF
h
FE1
/h
FE2
CONDITION
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 2 V, I
C
= 7 mA
Note 1
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 7 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
7.5
7
70
10
8.5
13
12
0.4
9
8.5
1.5
1.5
2
2
0.6
MIN.
TYP.
MAX.
0.1
0.1
140
GHz
GHz
pF
dB
dB
dB
dB
UNIT
µ
A
µ
A
Notes 1.
Pulse Measurement: Pw
≤
350
µ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
KB
T84
70 to 140
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
50
Total Power Dissipation P
T
(mW)
200
Collector Current I
C
(mA)
40
V
CE
= 2 V
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
30
100
2 Elements in Total
Per Element
60 mW
30 mW
20
10
0
50
100
150
0
0.5
Base to Emitter Voltage V
BE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1.0
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
25
500
Collector Current I
C
(mA)
15
10
5
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
1.0
2.0
3.0
DC Current Gain h
FE
20
200
100
50
V
CE
= 2 V
V
CE
= 1 V
20
10
0
1
2
5
10
20
50
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
2
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