DATA SHEET
SILICON TRANSISTOR
µ
PA808T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
• Low Noise
NF = 1.3 dB TYP. @V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• A Super Mini Mold Package Adopted
• Built-in 2 Transistors (2
×
2SC5184)
2.0±0.2
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
1.3
ORDERING INFORMATION
PART NUMBER
QUANTITY
Loose products
(50 PCS)
Taping products
(3 KPCS/Reel)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
0.65
2
µ
PA808T
µ
PA808T-T1
0.65
3
0.9±0.1
pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
5
3
2
30
90 in 1 element
180 in 2 elements
Note
150
–65 to +150
UNIT
V
V
V
mA
mW
PIN CONFIGURATION (Top View)
6
Q
1
0 to 0.1
NEC Sales Representative. (Unit sample quantity is 50
5
4
Q
2
1
2
3
Junction Temperature
Storage Temperature
T
j
T
stg
°C
°C
PIN CONNECTIONS
1. Collector (Q1) 4. Emitter (Q2)
2. Emitter (Q1)
5. Base (Q2)
3. Collector (Q2) 6. Base (Q1)
Note
110 mW must not be exceeded in 1 element.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P12154EJ2V0DS00 (2nd edition)
(Previous No. ID-3642)
Date Published November 1996 N
Printed in Japan
©
©
0.15
+0.1
–0
Remark
If you require an evaluation sample, please contact an
0.7
4
5
0.2
+0.1
–0
1
6
X Y
1995
1994
µ
PA808T
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feed-back Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
h
FE
Ratio
SYMBOL
I
CBO
I
EBO
h
FE
f
T
f
T
C
re
|S
21e
|
2
|S
21e
|
2
NF
NF
h
FE1
/h
FE2
CONDITION
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 2 V, I
C
= 20 mA
Note 1
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
7
6
70
9
7
11
9
0.4
8.5
7.5
1.3
1.3
2
2
0.8
MIN.
TYP.
MAX.
0.1
0.1
140
GHz
GHz
pF
dB
dB
dB
dB
UNIT
µ
A
µ
A
Notes 1.
Pulse Measurement: Pw
≤
350
µ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
KB
T86
70 to 140
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
50
Total Power Dissipation P
T
(mW)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
2 Elements in Total 180 mW
Collector Current I
C
(mA)
200
40
30
100
Per Element
90 mW
20
10
0
50
100
150
0
0.5
Base to Emitter Voltage V
BE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1.0
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
Collector Current I
C
(mA)
500
20
15
10
5
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
1.0
2.0
3.0
DC Current Gain h
FE
200
V
CE
= 2 V
100
50
V
CE
= 1 V
20
10
0
1
2
5
10
20
50
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
2
µ
PA808T
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
15
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Insertion Power Gain |S
21e
|
2
(dB)
10
INSERTION GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
V
CE
= 2 V
V
CE
= 2 V
10
V
CE
= 1 V
V
CE
= 1 V
5
5
0
1
2
3
5
7
10
1
2
3
5
7
10
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
3
f = 2 GHz
Feed-back Capacitance C
re
(pF)
f = 1 MHz
0.6
Noise Figure NF (dB)
0.8
Collector Current I
C
(mA)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
2
V
CE
= 2 V
0.4
V
CE
= 1 V
1
0.2
1
2
3
5
7
10
0
2.0
4.0
6.0
8.0
10.0
Collector Current I
C
(mA)
Collector to Base Voltage V
CB
(V)
3
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