PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA809T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
NF = 1.5 dB TYP. @V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
0.65 0.65
1.3
I
C
= 100 mA
• A Mini Mold Package Adopted
• Built-in 2 Transistors (2
×
2SC5193)
2.0±0.2
2
3
0.9±0.1
ORDERING INFORMATION
PART NUMBER
QUANTITY
Loose products
(50 PCS)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
0.7
4
5
µ
PA809T
PIN CONFIGURATION (Top View)
µ
PA809T-T1
Taping products
(3 KPCS/Reel)
6
Q
1
5
4
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
0~0.1
Q
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
9
6
2
100
150 in 1 element
200 in 2 elements
Note
150
–65 to +150
UNIT
V
V
V
mA
mW
1
2
3
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Base (Q2)
2. Emitter (Q1)
6. Base (Q1)
3. Collector (Q2)
Junction Temperature
Storage Temperature
T
j
T
stg
˚C
˚C
Note
110 mW must not be exceeded in 1 element.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
The information in this document is subject to change without notice.
Document No. ID-3643
(O.D. No. ID-9150)
Date Published April 1995 P
Printed in Japan
©
0.15
–0
+0.1
0.2
–0
1
6
+0.1
X Y
1995
µ
PA809T
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feed-back Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
h
FE
Ratio
SYMBOL
I
CBO
I
EBO
h
FE
f
T
f
T
C
re
|S
21
|
2
|S
21
|
2
NF
NF
h
FE1
/h
FE2
CONDITION
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 1 V, I
C
= 3 mA
Note 1
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
2.5
80
4.0
4.5
9.0
0.75
3.5
6.5
1.7
1.5
2.5
0.85
MIN.
TYP.
MAX.
0.1
0.1
160
GHz
GHz
pF
dB
dB
dB
dB
UNIT
µ
A
µ
A
Notes 1.
Pulse Measurement: Pw
≤
350
µ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
KB
T88
80 to 160
2
µ
PA809T
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Total Power Dissipation P
T
(mW)
Free Air
Collector Current I
C
(mA)
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
2
El
em
en
100
Pe
rE
ts
i
n
lem
To
en
ta
l
t
0
50
100
Ambient Temperature T
A
(°C)
150
0.5
Base to Emitter Voltage V
BE
(V)
1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200
µ
A
Collector Current I
C
(mA)
180
µ
A
20
140
µ
A
120
µ
A
100
µ
A
10
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
6
Collector to Emitter Voltage V
CE
(V)
0
0.1 0.2
DC Current Gain h
FE
160
µ
A
200
V
CE
= 1 V
DC CURENT GAIN vs.
COLLECTOR CURRENT
100
0.5 1
2
5 10 20
Collector Current I
C
(mA)
50 100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
Gain Bandwidth Product f
T
(GHz)
Insertion Power Gain |S
21e
|
2
(dB)
f = 2 GHz
V
CE
= 1 V
10
INSERTION GAIN vs.
COLLECTOR CURRENT
f = 2 GHz
V
CE
= 1 V
5
5
0
1
2
3
5
Collector Current I
C
(mA)
7
10
0
1
2
3
5
Collector Current I
C
(mA)
7
10
3
µ
PA809T
NOISE FIGURE vs.
COLLECTOR CURRENT
3
V
CE
= 1 V
Feed-back Capacitance C
re
(pF)
Noise Figure NF (dB)
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
f = 2 GHz
2
1.0
0.5
f = 1 GHz
1
1
2
3
5
7
10
0.1
1
5
10
20
Collector Current l
C
(mA)
Collector to Base Voltage V
CB
(V)
Maximum Available Power Gain MAG (dB)
Insertion Power Gain IS
21e
l
2
(dB)
MAXIMUM AVAILABLE GAIN / INSERTION
POWER GAIN vs. FREQUENCY
V
CE
= 1 V
I
C
= 5 mA
30
Noise Figure NF (dB)
NOISE FIGURE vs.FREQUENCY
V
CE
= 1 V
I
C
= 5 mA
1.5
MAG
20
IS
21e
l
2
1
10
0
0.1
0.5
1
5
0.5
0.1
0.5
Frequency f (GHz)
1.0
2
Frequency f (GHz)
4
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