PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA812T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
×
2SC4227) SMALL MINI MOLD
The
µ
PA812T has built-in 2 low-voltage transistors which are designed to
amplify low noise in the VHF band to the UHF band.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
FEATURES
• Low Noise
NF = 1.4 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
0.65 0.65
• High Gain
1.3
|S
21e
|
2
= 12 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• A Small Mini Mold Package Adopted
• Built-in 2 Transistors (2
×
2SC4227)
2.0±0.2
2
3
ORDERING INFORMATION
PART NUMBER
QUANTITY
Loose products
(50 PCS)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
0.9±0.1
µ
PA812T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
20
10
1.5
65
150 in 1 element
200 in 2 elements
Note
150
–65 to +150
UNIT
V
V
V
mA
mW
6
Q
1
1
5
0 to 0.1
4
Q
2
2
3
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Emitter (Q1)
2. Base (Q2)
6. Base (Q1)
3. Collector (Q2)
Junction Temperature
Storage Temperature
T
j
T
stg
˚C
˚C
Note
110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. P11465EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
0.15
–0
+0.1
µ
PA812T
0.7
4
5
1995
0.2
–0
1
6
+0.1
XY
µ
PA812T
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
h
FE
Ratio
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
NF
h
FE1
/h
FE2
2
CONDITION
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 7 mA
Note 1
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
MIN.
TYP.
MAX.
0.8
0.8
UNIT
µ
A
µ
A
70
4.5
7.0
240
GHz
0.9
pF
dB
2.7
dB
10
12
1.4
0.85
Notes 1.
Pulse Measurement: Pw
≤
350
µ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
34R
70 to 150
GB
35R
110 to 240
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
P
T
- T
A
Characteristics
25
Total Power Dissipation P
T
(mW)
I
C
- V
CE
Characteristics
Free Air
Collector Current I
C
(mA)
200
2
El
20
em
15
100
Pe
en
ts
A
160
µ
A
140
µ
120
µ
A
rE
in
lem
en
t
To
ta
l
10
5
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
0.5
Collector to Emitter Voltage V
CE
(V)
h
FE
- I
C
Characteristics
1.0
0
50
100
150
0
Ambient Temperature T
A
(°C)
I
C
- V
BE
Characteristics
20
V
CE
= 3 V
Collector Current I
C
(mA)
DC Current Gain h
FE
200
V
CE
= 3 V
100
10
50
20
0
0.5
Base to Emitter Voltage V
BE
(V)
1.0
10
0.5
1
5
10
50
Collector Current I
C
(mA)
2
Integrated technical exchanges
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