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SIDC14D60C8X1SA2

Description
Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, DIE-1
CategoryDiscrete semiconductor    diode   
File Size46KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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SIDC14D60C8X1SA2 Overview

Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, DIE-1

SIDC14D60C8X1SA2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionR-XUUC-N1
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time13 weeks
applicationFAST SOFT RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.9 V
JESD-30 codeR-XUUC-N1
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-40 °C
Maximum output current50 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage600 V
Maximum reverse current27 µA
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
SIDC14D60C8
Fast switching diode chip in Emitter Controlled 3 -Technology
Features:
600V Emitter Controlled 3 technology
70 µm chip
soft, fast switching
low reverse recovery charge
small temperature coefficient
This chip is used for:
Power module
Discrete components
Applications:
Drives
A
C
Chip Type
SIDC14D60C8
V
R
600V
I
F
50A
Die Size
4.6 x 3.05 mm
2
Package
sawn on foil
Mechanical Parameters
Raster size
Area total
Anode pad size
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
4.6 x 3.05
14.03
3.9 x 2.35
70
200
1960
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al,
≤500µm
0.65mm; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°
C
µm
mm
mm
2
Edited by INFINEON Technologies, IMM PSD, L4024M, Edition 1.2, 08.07.10

SIDC14D60C8X1SA2 Related Products

SIDC14D60C8X1SA2 SIDC14D60C8
Description Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, DIE-1 Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, DIE-1
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction R-XUUC-N1 DIE-1
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
application FAST SOFT RECOVERY FAST SOFT RECOVERY
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.9 V 1.9 V
JESD-30 code R-XUUC-N1 R-XUUC-N1
Number of components 1 1
Phase 1 1
Number of terminals 1 1
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 50 A 50 A
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form UNCASED CHIP UNCASED CHIP
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 600 V 600 V
Maximum reverse current 27 µA 27 µA
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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