DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD4443362
4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM
128K-WORD BY 36-BIT
HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
Description
The
µ
PD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced CMOS
technology using Full-CMOS six-transistor memory cell.
The
µ
PD4443362 is suitable for applications which require synchronous operation, high-speed, low voltage, high-
density memory and wide bit configuration, such as cache and buffer memory.
The
µ
PD4443362 is packaged in 100-pin plastic LQFP with a 1.4 mm package thickness for high density and low
capacitive loading.
Features
•
Fully synchronous operation
•
HSTL Input / Output levels
5
•
Fast clock access time : 3.8 ns (133 MHz)
•
Asynchronous output enable control : /G
•
Byte write control : /SBa (DQa1-9), /SBb (DQb1-9), /SBc (DQc1-9), /SBd (DQd1-9)
•
Common I/O using three-state outputs
•
Internally self-timed write cycle
•
Late write with 1 dead cycle between Read-Write
•
3.3 V (Chip) / 1.5 V (I/O) supply
•
100-pin plastic LQFP package, 14 mm x 20 mm
•
Sleep Mode : ZZ (Enables sleep mode, active high)
5
Ordering Information
Part number
Access time
3.8 ns
Clock frequency
133 MHz
Package
100-PIN PLASTIC LQFP (14 x 20)
µ
PD4443362GF-A75
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14439EJ2V0DS00 (2nd edition)
Date Published February 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
2000
µ
PD4443362
Pin Name and Functions
Pin name
SA0 to SA16
Pin No.
Description
37, 36, 35, 34, 33, 32, 100, 99, 82, 81, 44, Synchronous Address Input
45, 46, 47, 48, 49, 50
DQa1 to DQa9
DQb1 to DQb9
DQc1 to DQc9
DQd1 to DQd9
/SS
/SW
/SBa
Note1
/SBb
Note1
/SBc
Note1
/SBd
Note1
/G
ZZ
Note2
K, /K
V
DD
V
SS
V
DD
Q
V
SS
Q
V
REF
NC
63, 62, 59, 58, 57, 56, 53, 52, 51
68, 69, 72, 73, 74, 75, 78, 79, 80
13, 12, 9, 8, 7, 6, 3, 2, 1
18, 19, 22, 23, 24, 25, 28, 29, 30
98
85
93
95
96
97
86
64
89, 88
15, 41, 65, 91
17, 40, 67, 90
4, 11, 20, 27, 54, 61, 70, 77
5, 10, 21, 26, 55, 60, 71, 76
38, 43, 87
14, 16, 31, 39, 42, 66, 83, 84, 92, 94
Synchronous Data Input / Output
Synchronous Chip Select
Synchronous Byte Write Enable
Synchronous Byte "a" Write Enable
Synchronous Byte "b" Write Enable
Synchronous Byte "c" Write Enable
Synchronous Byte "d" Write Enable
Asynchronous Output Enable
Asynchronous Sleep Mode
Main Clock Input
Core Power Supply
Ground
Output Buffer Power Supply
Output Buffer Ground
Input Reference
No Connection
Notes 1.
If Byte Write Operation is not used, Byte Write Pins (/SBa, /SBb, /SBc, /SBd) are to be tied to V
SS
.
2.
If Sleep Mode is not used, ZZ Pin is to be tied to V
SS
.
Remark
This device only supports Single Differential Clock, R / R Mode.
(R / R stands for Registered Input / Registered Output.)
Data Sheet M14439EJ2V0DS
3
京公网安备 11010802033920号
EEWORLD
