PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA813T
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
×
2SC4570) SMALL MINI MOLD
µ
PA813T has built-in 2 transistors which were developed for UHF.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
FEATURES
• High f
T
f
T
= 5.5 GHz TYP. (@V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz)
0.65 0.65
2.0±0.2
C
ob
= 0.7 pF TYP. (@V
CB
= 5 V, I
E
= 0, f = 1 MHz)
• A Surface Mounting Package Adopted
• Built-in 2 Transistors (2
×
2SC4570)
1.3
2
3
ORDERING INFORMATION
0.9±0.1
PART NUMBER
QUANTITY
Loose products
(50 PCS)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
0.7
µ
PA813T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
20
12
3
30
120 in 1 element
160 in 2 elements
Note
125
–55 to +125
UNIT
V
V
6
Q
1
5
0 to 0.1
4
Q
2
1
2
3
V
mA
mW
Junction Temperature
Storage Temperature
T
j
T
stg
˚C
˚C
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Emitter (Q1)
2. Base (Q2)
6. Base (Q1)
3. Collector (Q2)
Note
90 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. P11466EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
0.15
–0
+0.1
µ
PA813T
4
5
0.2
–0
1
6
+0.1
• Small Collector Capacitance
XY
1995
µ
PA813T
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
Collector to Emitter
Saturation Voltage
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
h
FE
Ratio
SYMBOL
I
CBO
I
EBO
V
CE (sat)
CONDITION
V
CB
= 15 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
h
FE
= 10, I
C
= 5 mA
MIN.
TYP.
MAX.
0.1
0.1
0.5
UNIT
µ
A
µ
A
V
h
FE
f
T
C
re
|S
21e
|
2
h
FE1
/h
FE2
V
CE
= 5 V, I
C
= 5 mA
Note 1
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 5 V, I
C
= 5 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
60
5.5
0.7
5
0.85
200
GHz
0.9
pF
dB
Notes 1.
Pulse Measurement: Pw
≤
350
µ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
73T
60 to 120
GB
74T
100 to 200
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
P
T
- T
A
Characteristics
24
Total Power Dissipation P
T
(mW)
Collector Current I
C
(mA)
I
C
- V
BE
Characteristics
Free Air
V
CE
= 5 V
150
160 mW
120 mW
2
16
100
Pe
r
El
em
El
em
en
ts
in
To
50
en
8
l
ta
t
0
50
100
150
0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(°C)
Base to Emitter Voltage V
BE
(V)
2
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