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IXTA70N075T2

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size311KB,7 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
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IXTA70N075T2 Overview

Power Field-Effect Transistor,

IXTA70N075T2 Parametric

Parameter NameAttribute value
MakerLittelfuse
package instruction,
Reach Compliance Codeunknown
JESD-609 codee3
Humidity sensitivity level2
Terminal surfaceMatte Tin (Sn)
TrenchT2
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA70N075T2
IXTP70N075T2
V
DSS
I
D25
R
DS(on)
= 75V
= 70A
12m
TO-263 (IXTA)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 175C
T
J
= 25C to 175C, R
GS
= 1M
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
T
C
= 25C
Maximum Ratings
75
75
20
70
180
40
300
150
-55 ... +175
175
-55 ... +175
V
V
V
A
A
A
mJ
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
TO-220 (IXTP)
G
D
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220)
TO-263
TO-220
300
260
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
International Standard Packages
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
175°C Operating Temperature
High Current Handling Capability
ROHS Compliant
High Performance Trench
Technology for extremely low R
DS(on)
Advantages
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
GS
=
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150C
V
GS
= 10V, I
D
= 25A, Notes 1 & 2
Characteristic Values
Min. Typ.
Max.
75
2.0
4.0
           200
2
V
V
nA
A
High Power Density
Easy to Mount
Space Savings
Applications
Automotive Engine Control
Synchronous Buck Converter
(for Notebook SystemPower &
General Purpose Point & Load)
DC/DC Converters
High Current Switching Applications
Power Train Management
Distributed Power Architecture
200
A
10
12 m
© 2018 IXYS CORPORATION, All Rights Reserved
DS99951B(7/18)

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IXTA70N075T2 IXTP70N075T2
Description Power Field-Effect Transistor, Power Field-Effect Transistor,
Maker Littelfuse Littelfuse
Reach Compliance Code unknown compli
JESD-609 code e3 e1
Terminal surface Matte Tin (Sn) Tin/Silver/Copper (Sn/Ag/Cu)
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