DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD444016L
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
Description
The
µ
PD444016L is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
±
0.3 V.
The
µ
PD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).
Features
•
262,144 words by 16 bits organization
•
Fast access time : 8, 10, 12 ns (MAX.)
•
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
•
Output Enable input for easy application
•
Single +3.3 V power supply
Ordering Information
Part number
Package
Access time
ns (MAX.)
Supply current mA (MAX.)
At operating
210
190
180
210
190
180
At standby
5
µ
PD444016LLE-A8
µ
PD444016LLE-A10
µ
PD444016LLE-A12
µ
PD444016LG5-A8-7JF
µ
PD444016LG5-A10-7JF
µ
PD444016LG5-A12-7JF
44-pin plastic SOJ
(10.16 mm (400))
8
10
12
44-pin plastic TSOP (II)
(10.16 mm (400))
(Normal bent)
8
10
12
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14431EJ3V0DS00 (3rd edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
1999
µ
PD444016L
Pin Configuration (Marking Side)
/××× indicates active low signal.
44-pin plastic SOJ (10.16 mm (400))
[
µ
PD444016LLE ]
44-pin plastic TSOP (II) (10.16 mm (400)) (Normal bent)
[
µ
PD444016LG5-×××
×××-7JF
]
×××
A0
A1
A2
A3
A4
/CS
I/O1
I/O2
I/O3
I/O4
V
CC
GND
I/O5
I/O6
I/O7
I/O8
/WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
/OE
/UB
/LB
I/O16
I/O15
I/O14
I/O13
GND
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
A0 - A17
: Address Inputs
I/O1 - I/O16 : Data Inputs / Outputs
/CS
/WE
/OE
/LB, /UB
V
CC
GND
NC
: Chip Select
: Write Enable
: Output Enable
: Byte data select
: Power supply
: Ground
: No connection
Remark
Refer to
Package Drawings
for the 1-pin index mark.
2
Data Sheet M14431EJ3V0DS
µ
PD444016L
Block Diagram
Address buffer
A0
|
A17
Row decoder
Memory cell array
4,194,304 bits
I/O1 - I/O8
Input data
controller
Sense amplifier /
Switching circuit
Column decoder
Output data
controller
I/O9 - I/O16
/WE
/CS
/LB
Address buffer
/UB
/OE
V
CC
GND
Truth Table
/CS
/OE
/WE
/LB
/UB
Mode
I/O1 - I/O8
H
L
×
L
×
H
×
L
L
H
L
×
L
L
L
H
L
L
H
×
H
×
×
H
×
L
H
L
L
H
L
×
H
Output disable
Write
Not selected
Read
High impedance
D
OUT
D
OUT
High impedance
D
IN
D
IN
High impedance
High impedance
High impedance
I/O
I/O9 - I/O16
High impedance
D
OUT
High impedance
D
OUT
D
IN
High impedance
D
IN
High impedance
High impedance
I
SB
I
CC
Supply current
Remark
×
: Don’t care
Data Sheet M14431EJ3V0DS
3
µ
PD444016L
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
V
CC
V
T
T
A
T
stg
Condition
Rating
–0.5
Note
to +4.0
–0.5
Note
to +4.0
0 to 70
–55 to +125
Unit
V
V
°C
°C
•
•
Supply voltage
Input / Output voltage
Operating ambient temperature
Storage temperature
Note
–2.0 V (MIN.) (pulse width : 2 ns)
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
High level input voltage
Low level input voltage
Operating ambient temperature
Symbol
V
CC
V
IH
V
IL
T
A
Condition
MIN.
3.0
2.0
–0.3
Note
0
TYP.
3.3
MAX.
3.6
V
CC
+0.3
+0.8
70
Unit
V
V
V
°C
Note
–2.0 V (MIN.) (pulse width : 2 ns)
4
Data Sheet M14431EJ3V0DS
µ
PD444016L
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Input leakage current
Output leakage current
Symbol
I
LI
I
LO
Test condition
V
IN
= 0 V to V
CC
V
I/O
= 0 V to V
CC
, /CS = V
IH
or /OE = V
IH
or /WE = V
IL
or /LB = V
IH
or /UB = V
IH
Operating supply current
I
CC
/CS = V
IL
,
I
I/O
= 0 mA,
Cycle time : 8 ns
Cycle time : 10 ns
210
190
180
40
5
mA
mA
MIN.
–2
–2
TYP.
MAX.
+2
+2
Unit
µ
A
µ
A
Minimum cycle time Cycle time : 12 ns
Standby supply current
I
SB
I
SB1
/CS = V
IH
, V
IN
= V
IH
or V
IL
/CS
≥
V
CC
– 0.2 V,
V
IN
≤
0.2 V or V
IN
≥
V
CC
– 0.2 V
High level output voltage
Low level output voltage
V
OH
V
OL
I
OH
= –4.0 mA
I
OL
= +8.0 mA
2.4
V
0.4
V
Remarks 1.
V
IN
: Input voltage
V
I/O
: Input / Output voltage
2.
These DC characteristics are in common regardless of package types.
Capacitance (T
A
=
25
°
C, f = 1 MHz)
Parameter
Input capacitance
Input / Output capacitance
Symbol
C
IN
C
I/O
V
IN
= 0 V
V
I/O
= 0 V
Test condition
MIN.
TYP.
MAX.
6
8
Unit
pF
pF
Remarks 1.
V
IN
: Input voltage
V
I/O
: Input / Output voltage
2.
These parameters are periodically sampled and not 100% tested.
Data Sheet M14431EJ3V0DS
5
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