DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA814TC
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
×
2SC5195)
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Low voltage operation, low phase distortion
• Low noise: NF = 1.5 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• Flat-lead 6-pin thin-type ultra super minimold package.
• Built-in 2 transistors (2
×
2SC5195)
ORDERING INFORMATION
Part Number
Package
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Supplying Form
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to
perforation side of the tape.
µ
PA814TC
µ
PA814TC-T1
Taping products
(3 kp/reel)
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µ
PA814TC. Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Note
Ratings
9
6
2
100
200 in 1 element
230 in 2 elements
Junction Temperature
Storage Temperature
T
j
T
stg
150
–65 to +150
˚C
˚C
Unit
V
V
V
mA
mW
Note
Mounted on 1.08 cm
2
×
1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. P14551EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999
µ
PA814TC
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feedback Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Symbol
I
CBO
I
EBO
h
FE
f
T
f
T
C
re
|S
21e
|
2
|S
21e
|
2
NF
NF
Conditions
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 1 V, I
C
= 3 mA
Note 1
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
MIN.
–
–
80
4.0
–
–
2.5
–
–
–
TYP.
–
–
–
4.5
9.0
0.75
3.5
6.5
1.7
1.5
MAX.
0.1
0.1
160
–
–
0.85
–
–
2.5
–
GHz
GHz
pF
dB
dB
dB
dB
Unit
µ
A
µ
A
Notes 1.
Pulse Measurement: PW
≤
350
µ
s, Duty Cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
KB
87
80 to 160
2
Data Sheet P14551EJ1V0DS00
µ
PA814TC
TYPICAL CHARACTERISTICS (T
A
= +25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
230
200
2 Elements in total
Free Air
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
V
CE
= 1 V
Total Power Dissipation P
T
(mW)
Per
Element
100
0
0
50
100
150
0
0.5
Base to Emitter Voltage V
BE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
25
20
15
10
5
0
1 000
V
CE
= 1 V
Collector Current I
C
(mA)
DC Current Gain h
FE
I
B
= 160
µ
A
I
B
= 140
µ
A
I
B
= 120
µ
A
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 60
µ
A
I
B
= 40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
6
100
10
0.1
1
10
100
Collector to Emitter Voltage V
CE
(V)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
15.000
Insertion Power Gain
S
21e
2
(dB)
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
9.000
f = 2 GHz
8.000
V
CE
= 3 V
f = 2 GHz
V
CE
= 1 V
V
CE
= 3 V
13.000
6.000
11.000
V
CE
= 1 V
9.000
4.000
7.000
2.000
5.000
0.000
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
Data Sheet P14551EJ1V0DS00
3
µ
PA814TC
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.800
f = 2 GHz
Feedback Capacitance C
re
(pF)
NOISE FIGURE vs. COLLECTOR CURRENT
6.00
5.00
Noise Figure NF (dB)
f = 1 MHz
0.700
0.600
0.500
0.400
0.300
0.200
0.100
0.000
1
10
Collector to Base Voltage V
CB
(V)
100
4.00
3.00
V
CE
= 1 V
2.00
1.00
0.00
V
CE
= 3 V
1
10
Collector Current I
C
(mA)
INSERTION POWER GAIN/MAXIMUM
AVAILABLE GAIN vs. FREQUENCY
100
Maximum Available Power Gain MAG. (dB)
Insertion Power Gain
S
21e
2
(dB)
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.1
V
CE
= 1 V
I
C
= 3 mA
1.0
Frequency f (GHz)
10.0
V
CE
= 3 V
I
C
= 20 mA
4
Data Sheet P14551EJ1V0DS00
Embedded System
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