PRELIMINARY DATA SHEET
µ
PD444016L-Y
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
MOS INTEGRATED CIRCUIT
Description
The
µ
PD444016L-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
±
0.3 V.
The
µ
PD444016L-Y is packaged in 44-PIN PLASTIC TSOP (II).
Features
•
262,144 words by 16 bits organization
•
Fast access time : 8, 10, 12 ns (MAX.)
•
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
•
Output Enable input for easy application
•
Single +3.3 V power supply
Ordering Information
Part number
Package
Access time
ns (MAX.)
Supply current mA (MAX.)
At operating
210
190
180
At standby
5
µ
PD444016LG5-A8Y-7JF
µ
PD444016LG5-A10Y-7JF
µ
PD444016LG5-A12Y-7JF
44-PIN PLASTIC TSOP (II)
(10.16 mm (400))
(Normal bent)
8
10
12
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M15392EJ1V0DS00 (1st edition)
Date Published February 2001 NS CP(K)
Printed in Japan
©
2001
µ
PD444016L-Y
Pin Configuration (Marking Side)
/××× indicates active low signal.
44-PIN PLASTIC TSOP (II) (10.16 mm (400)) (Normal bent)
[
µ
PD444016LG5-A××
××Y-7JF
]
××
A0
A1
A2
A3
A4
/CS
I/O1
I/O2
I/O3
I/O4
V
CC
GND
I/O5
I/O6
I/O7
I/O8
/WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
/OE
/UB
/LB
I/O16
I/O15
I/O14
I/O13
GND
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
A0 - A17
: Address Inputs
I/O1 - I/O16 : Data Inputs / Outputs
/CS
/WE
/OE
/LB, /UB
V
CC
GND
NC
: Chip Select
: Write Enable
: Output Enable
: Byte data select
: Power supply
: Ground
: No connection
Remark
Refer to
Package Drawing
for the 1-pin index mark.
2
Preliminary Data Sheet M15392EJ1V0DS
µ
PD444016L-Y
Block Diagram
Address buffer
A0
|
A17
Row decoder
Memory cell array
4,194,304 bits
I/O1 - I/O8
Input data
controller
Sense amplifier /
Switching circuit
Column decoder
Output data
controller
I/O9 - I/O16
/WE
/CS
/LB
Address buffer
/UB
/OE
V
CC
GND
Truth Table
/CS
/OE
/WE
/LB
/UB
Mode
I/O1 - I/O8
H
L
×
L
×
H
×
L
L
H
L
×
L
L
L
H
L
L
H
×
H
×
×
H
×
L
H
L
L
H
L
×
H
Output disable
Write
Not selected
Read
High impedance
D
OUT
D
OUT
High impedance
D
IN
D
IN
High impedance
High impedance
High impedance
I/O
I/O9 - I/O16
High impedance
D
OUT
High impedance
D
OUT
D
IN
High impedance
D
IN
High impedance
High impedance
I
SB
I
CC
Supply current
Remark
×
: Don’t care
Preliminary Data Sheet M15392EJ1V0DS
3
µ
PD444016L-Y
Electrical Specifications
Absolute Maximum Ratings
Parameter
Supply voltage
Input / Output voltage
Operating ambient temperature
Storage temperature
Symbol
V
CC
V
T
T
A
T
stg
Condition
Rating
–0.5
Note
to +4.0
–0.5
Note
to +4.0
–40 to +85
–55 to +125
Unit
V
V
°C
°C
Note
–2.0 V (MIN.) (pulse width : 2 ns)
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
High level input voltage
Low level input voltage
Operating ambient temperature
Symbol
V
CC
V
IH
V
IL
T
A
Condition
MIN.
3.0
2.0
–0.3
Note
–40
TYP.
3.3
MAX.
3.6
V
CC
+0.3
+0.8
+85
Unit
V
V
V
°C
Note
–2.0 V (MIN.) (pulse width : 2 ns)
4
Preliminary Data Sheet M15392EJ1V0DS
µ
PD444016L-Y
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Input leakage current
Output leakage current
Symbol
I
LI
I
LO
Test condition
V
IN
= 0 V to V
CC
V
I/O
= 0 V to V
CC
, /CS = V
IH
or /OE = V
IH
or /WE = V
IL
or /LB = V
IH
or /UB = V
IH
Operating supply current
I
CC
/CS = V
IL
,
I
I/O
= 0 mA,
Minimum cycle time
Standby supply current
I
SB
I
SB1
Cycle time : 8 ns
Cycle time : 10 ns
Cycle time : 12 ns
210
190
180
40
5
mA
mA
MIN.
–2
–2
TYP.
MAX.
+2
+2
Unit
µ
A
µ
A
/CS = V
IH
, V
IN
= V
IH
or V
IL
/CS
≥
V
CC
– 0.2 V,
V
IN
≤
0.2 V or V
IN
≥
V
CC
– 0.2 V
High level output voltage
Low level output voltage
V
OH
V
OL
I
OH
= –4.0 mA
I
OL
= +8.0 mA
2.4
0.4
V
V
Remarks 1.
V
IN
: Input voltage
V
I/O
: Input / Output voltage
2.
These DC characteristics are in common regardless of product classification.
Capacitance (T
A
=
25
°
C, f = 1 MHz)
Parameter
Input capacitance
Input / Output capacitance
Symbol
C
IN
C
I/O
V
IN
= 0 V
V
I/O
= 0 V
Test condition
MIN.
TYP.
MAX.
6
8
Unit
pF
pF
Remarks 1.
V
IN
: Input voltage
V
I/O
: Input / Output voltage
2.
These parameters are not 100% tested.
Preliminary Data Sheet M15392EJ1V0DS
5
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