PRELIMINARY DATA SHEET
SILICON TRANSISTOR
P
PA827TF
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 6-PIN 2
u
2SC5179) THIN-TYPE SMALL MINI MOLD
FEATURES
• High gain with low operating current
|S
21e
|
2
= 9 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 8.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• 6-pin thin-type small mini mold package
• Built-in 2 transistors (2
u
2SC5179)
PACKAGE DRAWINGS (Unit: mm)
2.10±0.1
1.25±0.1
1.30
ORDERING INFORMATION
Part Number
Quantity
Loose products
(50 pcs)
Taping products
(3 kpcs/reel)
Packing Style
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2
Emitter), Pin 4 (Q2 Base) face to
perforation side of the tape.
2.00±0.2
0.65
2
0.65
3
P
PA827TF
P
PA827TF-T1
0.60±0.1
4
5
Remark
If you require an evaluation sample, please contact
an NEC Sales Representative.(Unit sample quantity
is 50 pcs).
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25qC)
q
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Rating
5
3
2
10
30 in 1 element
60 in 2 element
150
ð65
to 150
Unit
V
V
V
mA
mW
B1
6
Q1
1
C1
E2
5
B2
4
Q2
2
E1
C2
Junction Temperature
Storage Temperature
T
j
T
stg
°C
°C
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Caution is required concerning excess input, such as from static electricity, due to the high-precision
fabrication processes used for this device.
The information in this document is subject to change without notice.
Document No. P12692EJ1V0DS00 (1st edition)
Date Published July 1997 N
Printed in Japan
©
0 to 0.1
3
1997
0.13±0.05
0.45
0.22
+0.1
–0.05
R84
1
6
P
PA827TF
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feedback Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
h
FE
Ratio
Symbol
I
CBO
I
EBO
h
FE
f
T
f
T
C
re
|S
21e
|
2
|S
21e
|
2
NF
NF
h
FE1
/h
FE2
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 2 V, I
C
= 7 mA
Note 1
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 7 mA
h
FE
1 = Smaller h
FE
value among Q1 and Q2
h
FE
2 = Larger h
FE
value among Q1 and Q2
0.85
7.5
7
70
10
8.5
13
12
0.4
9
8.5
1.5
1.5
2
2
0.6
Condition
MIN.
TYP.
MAX.
0.1
0.1
140
GHz
GHz
pF
dB
dB
dB
dB
Unit
P
A
P
A
Notes 1.
2.
Pulse measurement P
W
d
350
P
s, Duty cycle
d
2%
Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge
method). Emitter should be connected to the guard pin of capacitance meter.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
value
FB
R84
70 to 140
2
P
PA827TF
TYPICAL CHARACTERISTICS (T
A
= 25qC)
q
Total Power Dissipation vs. Ambient Temperature
50
Total Power Dissipation P
T
(mW)
Collector Current vs. DC Base Voltage
V
CE
= 2 V
Collector Current I
C
(mA)
200
40
30
100
2 Elements in Total
Per Element
60 mW
30 mW
20
10
0
50
100
150
0
0.5
DC Base Voltage V
BE
(V)
1.0
Ambient Temperature T
A
(˚C)
Collector Current vs. Collector to Emitter Voltage
25
500
DC Current Gain vs. Collector Current
Collector Current I
C
(mA)
20
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
1.0
2.0
3.0
DC Current Gain hFE
200
100
50
15
V
CE
= 2 V
V
CE
= 1 V
10
5
20
10
0
1
2
5
10
20
50
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
3
P
PA827TF
Gain Bandwidth Product vs. Collector Current
15
10
Insertion Power Gain vs. Collector Current
Gain Bandwidth Product f
T
(GHz)
Insertion Power Gain |S
21e
|
2
(dB)
f = 2 GHz
V
CE
= 2 V
V
CE
= 2 V
V
CE
= 1 V
V
CE
= 1 V
10
5
5
1
2
3
5
7
10
20
0
1
2
3
5
7
10
20
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Noise Figure vs. Collector Current
3
f = 2 GHz
Feedback Capacitance vs. Collector to Base Voltage
0.8
f = 1 MHz
Feedback Capacitance C
re
(pF)
Noise Figure NF (dB)
0.6
2
V
CE
= 1 V
V
CE
= 2 V
1
0.4
0.2
1
2
3
5
7
10
0.0
2.0
4.0
6.0
8.0
10.0
Collector Current I
C
(mA)
Collector to Base Voltage V
CB
(V)
4
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