SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switch mode power
supplies and low power battery chargers.
KHB1D0N60G
N-Ch Planer MOSFET
FEATURES
・V
DSS
= 600V, I
D
= 0.4A
・Drain-Source
ON Resistance :
R
DS(ON)
=6.5Ω(Typ.), @V
GS
= 10V
MOSFET MAXIMUM RATING (Ta=25℃ Unless otherwise noted)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC
Drain Current
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Drain-Source Diode Forward Current
Drain Power Dissipation (T
C
=25℃)
Maximum Junction Temperature
Storage Temperature Range
I
DP
E
AS
I
S
P
D
T
j
T
stg
1.6
25
0.4
3
-55~150
-55~150
A
mJ
A
W
℃
℃
SYMBOL
V
DSS
V
GSS
I
D
RATING
600
±30
0.4
UNIT
V
V
A
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
thJA
120
℃/W
Note 1) Pulse Test : Pulse width≤10㎲, Duty cycle
≤1%
Note 2) Starting T
j
=25℃, I
D
=1A, V
DD
=50V
Equivalent Circuit
2008. 5. 8
Revision No : 2
1/6
KHB1D0N60G
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ Unless otherwise noted)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Drain-Source ON Resistance
Forward Transconductance
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)
g
FS
I
D
=250μ V
GS
=0V
A,
V
DS
=600V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
V
DS
=V
GS
, I
D
=250μ
A
V
GS
=10V, I
D
=0.5A
V
DS
=15V, I
D
=0.5A
600
-
-
2
-
-
-
-
-
-
6.5
1
-
100
±100
4
8
-
V
μ
A
nA
V
Ω
S
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
=300V, I
D
=1A, R
G
=25Ω
V
DS
=480V, I
D
=1A, V
GS
=10V
V
DS
=25V, V
GS
=0V, f=1MHz
-
-
-
-
-
-
-
-
-
-
156
23.5
3.8
7
1.1
3.7
6.5
10
22
40
-
-
-
9
-
-
-
-
ns
-
-
nC
pF
ELECTRICAL CHARACTERISTICS (Ta=25℃ Unless otherwise noted)
CHARACTERISTIC
Diode Forward Voltage
Reverse Recovery Time
SYMBOL
V
DS
T
rr
TEST CONDITION
I
SD
=1A, V
GS
=0V
V
GS
=0V, I
S
=1A, dIF/dt=100A/μ
s
MIN.
-
-
TYP.
-
140
MAX.
1.4
-
UNIT
V
ns
※
Upper electrical characteristics can be changed because these are tentative specifications.
※
Graphs are omitted because these are tentative specifications.
2008. 5. 8
Revision No : 2
2/6
MCU
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