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MT18HTS25672PKY-53EXX

Description
Synchronous DRAM Module, 256MX72, CMOS, LEAD FREE, DIMM-244
Categorystorage    storage   
File Size243KB,16 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
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MT18HTS25672PKY-53EXX Overview

Synchronous DRAM Module, 256MX72, CMOS, LEAD FREE, DIMM-244

MT18HTS25672PKY-53EXX Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeDIMM
package instructionDIMM,
Contacts244
Reach Compliance Codecompliant
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N244
JESD-609 codee4
memory density19327352832 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals244
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
2GB, 4GB (x72, DR) 244-Pin DDR2 Mini-RDIMM
Features
DDR2 SDRAM Mini-RDIMM
MT18HTS25672(P)K – 2GB
MT18HTS51272(P)K – 4GB
For component data sheets, refer to Micron’s Web site:
www.micron.com
Features
• 244-pin, mini registered dual in-line memory
module (Mini-RDIMM)
• Fast data transfer rates: PC2-3200, PC2-4200, or
PC2-5300
• Supports ECC error detection and correction
• 2GB (512 Meg x 72) and 4GB (1,024 Meg x 72)
• V
DD
= V
DD
Q = +1.8V
• V
DDSPD
= +1.7V to +3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
operation
• Supports redundant output strobe (RDQS/RDQS#)
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst length (BL) 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank, TwinDie
TM
(2COB) DRAM devices
• Phase-lock loop (PLL) to reduce loading on system
clock
Figure 1:
244-Pin Mini-RDIMM (MO-244)
PCB height 30.0mm (1.18in
)
Options
• Parity
• Operating temperature
1
Commercial (0°C
T
A
+70°C)
Industrial (–40°C
T
A
+85°C)
• Package
244-pin DIMM (Pb-free)
• Frequency/CAS latency
2
3.0ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
Marking
P
None
I
Y
-667
-53E
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
Table 1:
Key Timing Parameters
Data Rate (MT/s)
t
Speed Grade
-667
-53E
CL = 5
667
CL = 4
533
533
CL = 3
400
400
RCD
(ns)
15
15
RP
(ns)
15
15
t
t
RC
(ns)
55
55
PDF: 09005aef82218d23/Source: 09005aef82218d00
HTS18C256_512x72K.fm - Rev. B 9/07 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT18HTS25672PKY-53EXX Related Products

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Description Synchronous DRAM Module, 256MX72, CMOS, LEAD FREE, DIMM-244 Synchronous DRAM Module, 512MX72, CMOS, LEAD FREE, DIMM-244 Synchronous DRAM Module, 512MX72, CMOS, LEAD FREE, DIMM-244 Synchronous DRAM Module, 512MX72, CMOS, LEAD FREE, DIMM-244 Synchronous DRAM Module, 256MX72, CMOS, LEAD FREE, DIMM-244 Synchronous DRAM Module, 256MX72, CMOS, LEAD FREE, DIMM-244
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Parts packaging code DIMM DIMM DIMM DIMM DIMM DIMM
package instruction DIMM, DIMM, DIMM, DIMM, LEAD FREE, DIMM-244 LEAD FREE, DIMM-244
Contacts 244 244 244 244 244 244
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-XDMA-N244 R-XDMA-N244 R-XDMA-N244 R-XDMA-N244 R-XDMA-N244 R-XDMA-N244
JESD-609 code e4 e4 e4 e4 e4 e4
memory density 19327352832 bit 38654705664 bit 38654705664 bit 38654705664 bit 19327352832 bit 19327352832 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 72 72 72 72 72 72
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 244 244 244 244 244 244
word count 268435456 words 536870912 words 536870912 words 536870912 words 268435456 words 268435456 words
character code 256000000 512000000 512000000 512000000 256000000 256000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 256MX72 512MX72 512MX72 512MX72 256MX72 256MX72
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM DIMM DIMM
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
self refresh YES YES YES YES YES YES
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au)
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 30 30 30
Maker Micron Technology - - Micron Technology Micron Technology Micron Technology
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