PRELIMINARY DATA SHEET
SILICON TRANSISTOR
P
PA828TF
HIGH-FREQUENCY LOW-NOISE AMPLIFIER
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 6-PIN 2
u
2SC5184) THIN-TYPE SMALL MINI MOLD
FEATURES
• Low noise
NF = 1.3 dB TYP. @ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• 6-pin thin-type small mini mold package adopted
• Built-in 2 transistors (2
u
2SC5184)
PACKAGE DRAWINGS (Unit: mm)
2.10±0.1
1.25±0.1
1.30
ORDERING INFORMATION
Part Number
Quantity
Loose products
(50 pcs)
Taping products
(3 kpcs/reel)
Packing Style
2.00±0.2
0.65
2
0.65
3
P
PA828TF
P
PA828TF-T1
0.60±0.1
Remark
If you require an evaluation sample, please contact
an NEC Sales Representative (Unit sample quantity
is 50 pcs).
PIN CONFIGURATION (Top View)
B1
Unit
V
V
V
mA
mW
ABSOLUTE MAXIMUM RATINGS (T
A
= 25qC)
q
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Rating
5
3
2
30
90 in 1 element
180 in 2 elements
150
ð65
to +150
E2
5
6
Q1
1
C1
2
E1
0 to 0.1
B2
4
Q2
3
C2
Junction Temperature
Storage Temperature
T
j
T
stg
°C
°C
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Caution is required concerning excess input, such as from static electricity, due to the high-precision
fabrication processes used for this device.
The information in this document is subject to change without notice.
Document No. P12693EJ1V0DS00 (1st edition)
Date Published July 1997 N
Printed in Japan
©
0.13±0.05
0.45
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2
Emitter), Pin 4 (Q2 Base) face to
perforation side of the tape.
4
5
0.22
+0.1
–0.05
R86
1
6
1997
P
PA828TF
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Feedback Capacitance
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
h
FE
Ratio
Symbol
I
CBO
I
EBO
h
FE
f
T
f
T
C
re
|S
21e
|
2
|S
21e
|
2
NF
NF
h
FE1
/h
FE2
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 2 V, I
C
= 20 mA
Note 1
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CB
= 2 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA
h
FE
1 = smaller h
FE
value among Q1 and Q2
h
FE
2 = larger h
FE
value among Q1 and Q2
0.85
7
6
70
9
7
11
9
0.4
8.5
7.5
1.3
1.3
2
2
0.8
Condition
MIN.
TYP.
MAX.
0.1
0.1
140
GHz
GHz
pF
dB
dB
dB
dB
Unit
P
A
P
A
Notes 1.
Pulse measurement P
W
d
350
P
s, Duty cycle
d
2%
2.
Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge
method). Emitter should be connected to the guard pin of capacitance meter.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
value
KB
R86
70 to 140
2
P
PA828TF
TYPICAL CHARACTERISTICS (T
A
= 25
q
C)
Total Power Dissipation vs. Ambient Temperature
50
Total Power Dissipation P
T
(mW)
Collector Current vs. DC Base Voltage
V
CE
= 2 V
2 Elements in Total 180 mW
Collector Current I
C
(mA)
200
40
30
100
Per Element
90 mW
20
10
0
50
100
150
0
0.5
DC Base Voltage V
BE
(V)
DC Current Gain vs. Collector Current
1.0
Ambient Temperature T
A
(˚C)
Collector Current vs. Collector to Emitter Voltage
25
Collector Current I
C
(mA)
500
20
15
10
5
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80
µ
A
60
µ
A
40
µ
A
I
B
= 20
µ
A
1.0
2.0
3.0
DC Current Gain h
FE
200
V
CE
= 2 V
100
50
V
CE
= 1 V
20
10
0
1
2
5
10
20
50
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
3
P
PA828TF
Gain Bandwidth Product vs. Collector Current
15
f = 2 GHz
10
Insertion Power Gain vs. Collector Current
f = 2 GHz
V
CE
= 2 V
Gain Bandwidth Product f
T
(GHz)
V
CE
= 2 V
10
V
CE
= 1 V
Insertion Power Gain |S
21e
|
2
(dB)
V
CE
= 1 V
5
5
0
1
2
3
5
7
10
20
1
2
3
5
7
10
20
Collector Current I
C
(mA)
Noise Figure vs. Collector Current
3
f = 2 GHz
Collector Current I
C
(mA)
Feedback Capacitance vs. Collector to Base Voltage
0.8
Feedback Capacitance C
re
(pF)
f = 1 MHz
0.6
Noise Figure NF (dB)
2
V
CE
= 2 V
0.4
V
CE
= 1 V
1
0.2
1
2
3
5
7
10
0
2.0
4.0
6.0
8.0
10.0
Collector Current I
C
(mA)
Collector to Base Voltage V
CB
(V)
4
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