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UF4006G

Description
1A,800V,Ultra Fast Rectifiers, Diodes, Single, 800V, 1A, 1.7V, 1A, 30A
CategoryDiscrete semiconductor   
File Size290KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric Compare View All

UF4006G Overview

1A,800V,Ultra Fast Rectifiers, Diodes, Single, 800V, 1A, 1.7V, 1A, 30A

UF4006G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Parts packaging codeDO-41
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.075 µs
surface mountNO
category
VRRM (V) max800
IF (A) max1
VF (V) max1.7
Condition1_IF (A)1
IFSM (A) max30
IR (uA) max10
Condition2_VR (V)800
trr (ns) max75
AEC QualifiedNO
Maximum operating temperature150
Minimum operating temperature-55
Is it lead-free?no
Comply with ReachYES
RoHS compliantYES
Package OutlinesDO-41
BL
FEATURES
Low cost
GALAXY ELECTRICAL
UF4001G---UF4007G
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
GLASS
PASSIVATED
RECTIFIERS
Glass passivated juntion
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohil,Isopropanop
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 41
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UF
4001G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
UF
4002G
100
70
100
UF
UF
UF
UF
UF
UNITS
4003G 4004G 4005G 4006G 4007G
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@1.0
A
Maximum reverse current
@T
A
=25
I
FSM
30.0
A
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
1.0
10.0
100.0
50
20
50.0
- 55---- +150
- 55---- +150
1.7
V
A
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
75
10
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number
1769011
BL
GALAXY ELECTRICAL
1.

UF4006G Related Products

UF4006G UF4004G UF4003G UF4001G UF4007G UF4005G UF4002G
Description 1A,800V,Ultra Fast Rectifiers, Diodes, Single, 800V, 1A, 1.7V, 1A, 30A Ultra Fast Recovery Rectifier, VRRM MAX (V): 400V; IAV MAX (A): 1A; VFM MAX (V): 1V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 10uA; @VR (V): 400V; TRR MAX (NS): 50ns; Package: DO-41 Ultra Fast Recovery Rectifier, VRRM MAX (V): 200V; IAV MAX (A): 1A; VFM MAX (V): 1V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 10uA; @VR (V): 200V; TRR MAX (NS): 50ns; Package: DO-41 1A,50V,Ultra Fast Rectifiers, Diodes, Single, 50V, 1A, 1V, 1A, 30A 1A,1000V,Ultra Fast Rectifiers, Diodes, Single, 1000V, 1A, 1.7V, 1A, 30A 1A,600V,Ultra Fast Rectifiers, Diodes, Single, 600V, 1A, 1.7V, 1A, 30A 1A,100V,Ultra Fast Rectifiers, Diodes, Single, 100V, 1A, 1V, 1A, 30A
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Parts packaging code DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.7 V 1 V 1 V 1 V 1.7 V 1.7 V 1 V
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A 30 A 30 A
Number of components 1 1 1 1 1 1 1
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 800 V 400 V 200 V 50 V 1000 V 600 V 100 V
Maximum reverse recovery time 0.075 µs 0.05 µs 0.05 µs 0.05 µs 0.075 µs 0.075 µs 0.05 µs
surface mount NO NO NO NO NO NO NO
VRRM (V) max 800 400 200 50 1000 600 100
IF (A) max 1 1 1 1 1 1 1
VF (V) max 1.7 1 1 1 1.7 1.7 1
Condition1_IF (A) 1 1 1 1 1 1 1
IFSM (A) max 30 30 30 30 30 30 30
IR (uA) max 10 10 10 10 10 10 10
Condition2_VR (V) 800 400 200 50 1000 600 100
trr (ns) max 75 50 50 50 75 75 50
AEC Qualified NO NO NO NO NO NO NO
Minimum operating temperature -55 -55 -55 -55 -55 -55 -55
Is it lead-free? no no no no no no no
Comply with Reach YES YES YES YES YES YES YES
RoHS compliant YES YES YES YES YES YES YES
Package Outlines DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Maker Galaxy Microelectronics - - Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics
Maximum operating temperature 150 150 150 150 150 150 150
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