SMD Schottky Barrier Diode
CDBCT320-HF Thru. CDBCT3100-HF
Forward current: 3.0A
Reverse voltage: 20 to 100V
RoHS Device
Halogen Free
Features
- Lead less chip form, no lead damage.
- Low power loss, High efficiency.
- High current capability, low VF
- Plastic package has underwriters laboratory
flammability classification 94V-0.
0.201(5.10)
0.193(4.90)
3220/DO-214AB
0.319(8.10)
0.311(7.90)
)
.82
)
2(0
.03 (0.78
R 0 0 31
.
R0
0.154(3.90)
Typ.
0.081(2.05)
0.073(1.85)
0.053(1.35)
0.041(1.05)
0.081(2.05)
0.073(1.85)
Mechanical Data
- Case: Packed with FRP substrate and epoxy underfilled.
- Terminals: Pure Tin plated (Lead-Free),solderable
per MIL-STD-750, method 2026.
- Polarity: Laser cathode band marking.
- Weight: 0.093 grams (approx).
.
Dimensions in inches and (millimeter)
Circuit diagram
Maximum Ratings
(At Ta=25°C, unless otherwise noted)
Parameter
Non-repetitive peak reverse voltage
Average forward current
Peak forward surge current
@8.3ms single half sine-wave
Operating junction temperature range
Storage temperature
Symbol
V
RM
I
F(AV)
I
FSM
T
J
T
STG
CDBCT320-HF CDBCT340-HF CDBCT360-HF CDBCT3100-HF
Unit
20
40
3
100
-55 to +125
-55 ~ +150
-55 to +150
60
100
V
A
A
°C
°C
Electrical Characteristics
(At Ta=25°C, unless otherwise noted)
Parameter
Conditions
I
F
=0.5A
I
F
=1.0A
I
F
=3.0A
Forward voltage (Note1)
I
F
=0.5A
I
F
=1.0A
I
F
=3.0A
I
F
=0.5A
I
F
=1.0A
I
F
=3.0A
Reverse peak reverse current
Junction capacitance
Type
CDBCT320-HF
CDBCT340-HF
Symbol
Min.
-
-
-
-
-
-
-
-
-
Typ.
0.33
0.38
0.47
0.38
0.48
0.65
0.48
0.58
0.78
0.025
180
55
17
Max.
-
-
0.50
-
-
0.70
-
-
0.85
0.5
-
-
-
Unit
CDBCT360-HF
V
F
V
CDBCT3100-HF
V
R
=Max.V
RRM
, Ta=25°C
V
R
=4V, f=1.0MHz
Junction to ambient (Note 2)
I
RRM
Cj
R
ΘJA
R
ΘJL
-
-
-
-
mA
pF
ºC/W
ºC/W
Thermal resistance
Junction to lead (Note 2)
Notes: (1) Pulse test width pw=300usec, 1% duty cycle.
(2)Mounted on P.C. board with 0.2*0.2”(5.0*5.0mm) copper pad areas.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB044
REV:A
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBCT320-HF Thru. CDBCT3100-HF)
Fig.1- Typical Forward Current Derating Curve
Average Forward Rectified Current, (A)
3.0
120
Fig.2- Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current, (A)
8.3ms Single Half Sine-Wave
(JEDEC Method)
F
T360-H
CDBC
100
80
60
40
20
0
Th
0-HF
CT32
CDB
2.0
F
3100-H
DBCT
Thru C
HF
340-
BCT
ru CD
1.0
Resistive or inductive load
P.C.B Mounted on 0.2*0.2”(5.0*5.0mm)
Copper pad areas
0
0
25
50
75
100
125
150
175
1
10
100
Case Temperature, (°C)
Number of Cycles at 60Hz
Fig.3- Typical Instantaneous Forward
Characteristics
10
100
Fig.4- Typical Reverse Characteristics
Instantaneous Reverse Voltage, (mA)
Instantaneous forward current, (A)
10
T
J
=100°C
1.00
1.0
0.1
T
J
=25 C
O
0.1
0.01
CDBCT320-HF Thru CDBCT340-HF
CDBCT360-HF
CDBCT3100-HF
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
Instantaneous forward voltage, (V)
Percent of Rated Peak Reverse Voltage, (%)
Fig.5- Typical Junction Capacitance
400
T
J
=25 C
f=1MHz
V
sig
=50mVP-P
O
Junction Capacitance, (pF)
100
10
0.1
1
10
100
Reverse Voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB044
REV:A
Page 2
Comchip Technology CO., LTD.
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