BLW76 datasheet, PDF - EEWORLD Datasheet

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BLW76: DescriptionRF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4; CategoryDiscrete semiconductor The transistor; File Size15KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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BLW76 Overview

RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4

BLW76 Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	FLANGE MOUNT, O-CRFM-F4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	10 A
Collector-based maximum capacity	80 pF
Collector-emitter maximum voltage	35 V
Configuration	Single
Minimum DC current gain (hFE)	15
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	O-CRFM-F4
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	140 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	305 MHz

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BLW76

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI BLW76

is Designed for use

in class-AB or class-B operated high

power transmitters in the H.F. and

V.H.F bands and, as a Linear amplifier

in the H.F. band.

PACKAGE STYLE .380 4L FLG

B

.112 x 45°

A

E

C

E

C

D

E

Ø.125 NOM.

FULL R

J

.125

FEATURES:

•

P

G

= 18 dB min. at 75 W/30 MHz

•

IMD

3

= -30 dBc max. at 75 W

(PEP)

•

Omnigold™

Metalization System

B

F

I

GH

MAXIMUM RATINGS

DIM

MINIMUM

inches / mm

MAXIMUM

inches / mm

I

C

V

CB

V

CE

P

DISS

T

J

T

STG

θ

JC

O

10 A

60 V

35 V

140 W @ T

C

= 25 C

-65 C to +200 C

-65 C to +150 C

1.05 C/W

O

A

B

C

D

E

F

G

H

I

J

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.230 / 5.84

.730 / 18.54

.980 / 24.89

.385 / 9.78

.004 / 0.10

.085 / 2.16

.160 / 4.06

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.240 / 6.10

.255 / 6.48

CHARACTERISTICS

SYMBOL

BV

CEO

BV

CER

BV

EBO

I

CES

h

FE

C

ob

G

PE

IMD

3

I

C

= 50 mA

I

C

= 50 mA

I

E

= 10 mA

V

E

= 28 V

V

CE

= 5.0 V

V

CB

= 28 V

V

CE

= 25 V

T

C

= 25 C

O

NONETEST

CONDITIONS

R

BE

= 10

Ω

MINIMUM TYPICAL MAXIMUM

35

60

4.0

5.0

UNITS

V

mA

---

pF

dB

I

C

= 1.0 A

f = 1.0 MHz

I

CQ

= 3.2 A

Vision = -8 dB

Side Band = -16 dB

f = 225 MHz

Snd. = -7 dB

10

100

80

13.5

14.5

-55

P

REF

= 16 W

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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