DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA840TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
DESCRIPTION
The
µ
PA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to
UHF band.
FEATURES
• Low noise
Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, V
CE
= 3 V, I
C
= 3 mA
Q2 : NF = 1.4 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• High gain
Q1 :
|S
21e
|
2
= 8.5 dB TYP. @ f = 2 GHz, V
CE
= 3 V, I
C
= 10 mA
Q2 :
|S
21e
|
2
= 12.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• Built-in 2 different transistors (2SC5010, 2SC5007)
BUILT-IN TRANSISTORS
Q1
3-pin ultra super minimold part No.
2SC5010
Q2
2SC5007
ORDERING INFORMATION
Part Number
Package
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Taping products
(3 kp/reel)
Supplying Form
8 mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation
side of the tape.
µ
PA840TC
µ
PA840TC-T1
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µ
PA840TC.)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14556EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999
µ
PA840TC
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Ratings
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Q1
V
CBO
V
CEO
V
EBO
I
C
P
T
Note
Unit
Q2
20
10
1.5
65
200 in 1 element
230 in 2 elements
V
V
V
mA
mW
9
6
2
30
180 in 1 element
Junction Temperature
Storage Temperature
T
j
T
stg
150
−65
to +150
150
°C
°C
2
Note
Mounted on 1.08 cm
×
1.0 mm glass epoxy substrate.
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
(1) Q1
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
NF
2
Conditions
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 10 mA
Note 1
MIN.
−
−
75
10.0
−
7.0
−
TYP.
−
−
−
12.0
0.4
8.5
1.5
MAX.
0.1
0.1
150
−
0.7
−
2.5
Unit
µ
A
µ
A
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
GHz
pF
dB
dB
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
Notes 1.
Pulse Measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
2
Data Sheet P14556EJ1V0DS00
µ
PA840TC
(2) Q2
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
NF
2
Conditions
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 7 mA
Note 1
MIN.
−
−
70
4.5
−
10.0
−
TYP.
−
−
−
7.0
−
12.0
1.4
MAX.
0.8
0.8
150
−
0.9
−
2.7
Unit
µ
A
µ
A
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
GHz
pF
dB
dB
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Notes 1.
Pulse Measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value of Q1
h
FE
Value of Q2
FB
89
75 to 150
70 to 150
Data Sheet P14556EJ1V0DS00
3
µ
PA840TC
TYPICAL CHARACTERISTICS (T
A
= +25°C)
°
Q1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
230
2 Elements in total
Free Air
230
200
Per Element
(Q2)
100
Q2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2 Elements in total
Free Air
Total Power Dissipation P
T
(mW)
180
Per
Element
(Q1)
100
0
Total Power Dissipation P
T
(mW)
50
100
150
0
0
0
50
100
150
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 3 V
20
Ambient Temperature T
A
(°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
Collector Current I
C
(mA)
30
Collector Current I
C
(mA)
40
10
20
10
0
0
0.5
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1.0
0
0
0.5
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1.0
20
18
I
B
= 160
µ
A
I
B
= 140
µ
A
I
B
= 120
µ
A
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 60
µ
A
I
B
= 40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
6
25
Collector Current I
C
(mA)
Collector Current I
C
(mA)
16
14
12
10
8
6
4
2
0
20
I
B
= 160
µ
A
I
B
= 140
µ
A
15
I
B
= 120
µ
A
I
B
= 100
µ
A
I
B
= 80
µ
A
I
B
= 60
µ
A
I
B
= 40
µ
A
I
B
= 20
µ
A
0
1
2
3
4
5
6
10
5
0
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
4
Data Sheet P14556EJ1V0DS00
µ
PA840TC
Q1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 3 V
1 000
V
CE
= 3 V
Q2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
100
DC Current Gain h
FE
0.1
1
10
100
100
0
0.01
10
0.1
1
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
18.00
Gain Bandwidth Product f
T
(GHz)
V
CE
= 3 V
16.00 f = 2 GHz
14.00
12.00
10.00
8.00
6.00
4.00
2.00
0.00
1
10
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
12.00
Insertion Power Gain
S
21e
2
(dB)
V
CE
= 3 V
11.00 f = 2 GHz
16.00
Insertion Power Gain
S
21e
2
(dB)
14.00
12.00
10.00
8.00
6.00
4.00
100
8.00
Gain Bandwidth Product f
T
(GHz)
V
CE
= 3 V
7.00 f = 1 GHz
6.00
5.00
4.00
3.00
2.00
1.00
0.00
1
10
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
f = 1 GHz
100
10.00
9.00
8.00
7.00
6.00
5.00
4.00
1
10
Collector Current I
C
(mA)
100
1
10
Collector Current I
C
(mA)
100
Data Sheet P14556EJ1V0DS00
5
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