DM5517AH-250 datasheet, PDF - EEWORLD Datasheet

DM5517AH-250: DescriptionEEPROM, 2KX8, 250ns, Parallel, NMOS, CDIP28; Categorystorage storage; File Size202KB，6 Pages; ManufacturerLSC/CSI; Websitehttps://lsicsi.com

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DM5517AH-250 Overview

EEPROM, 2KX8, 250ns, Parallel, NMOS, CDIP28

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LSC/CSI
package instruction	DIP, DIP28,.6
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	250 ns
Other features	AUTOMATIC WRITE
command user interface	NO
Data polling	YES
Durability	1000000 Write/Erase Cycles
JESD-30 code	R-GDIP-T28
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2KX8
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	NMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
Maximum write cycle time (tWC)	2 ms

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