Ordering number : ENA1553B
MCH6342
SANYO Semiconductors
DATA SHEET
MCH6342
Features
•
•
•
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
Ultrahigh-speed switching
1.8V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1500mm
×0.8mm)
2
Conditions
Ratings
--30
±10
--4.5
--18
1.5
150
-
-55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7022A-009
2.0
0.25
6
5
4
0 to 0.02
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
0.15
MCH6342-TL-H
Packing Type : TL
Marking
LOT No.
LOT No.
YR
2.1
1.6
0.25
1
0.65
2
3
0.3
TL
Electrical Connection
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
4
1, 2, 5, 6
0.07
0.85
1
2
3
3
6
5
4
http://www.sanyosemi.com/en/network/
90512 TKIM/61312 TKIM/93009PE TKIM TC-00002128 No. A1553-1/7
MCH6342
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=--4.5A, VGS=0V
VDS=--15V, VGS=--4.5V, ID=--4.5A
See specified Test Circuit.
VDS=--10V, f=1MHz
Conditions
-1mA,
VGS=0V
ID=-
-30V,
VGS=0V
VDS=-
VGS=±8V, VDS=0V
-10V,
ID=-
-1mA
VDS=-
-10V,
ID=-
-2A
VDS=-
-2A,
VGS=-
-4.5V
ID=-
-1A,
VGS=-
-2.5V
ID=-
-0.3A,
VGS=-
-1.8V
ID=-
Ratings
min
--30
-
-1
±10
--0.4
3.4
5.8
56
71
95
650
105
83
8.2
28
100
60
8.6
1.3
2.4
-
-0.83
-
-1.2
73
99
155
-
-1.3
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VDD= --15V
0V
--4.5V
VIN
PW=10μs
D.C.≤1%
G
D
ID= --2A
RL=7.5Ω
VOUT
P.G
50Ω
S
CPH6342
Ordering Information
Device
MCH6342-TL-H
Package
MCPH6
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1553-2/7
MCH6342
--5
ID -- VDS
--8.0V
--4
.5 V
--5.0
--4.5
--4.0
ID -- VGS
VDS= --10V
--2.
5V
--4
--1
.
8V
Drain Current, ID -- A
Drain Current, ID -- A
--1.5V
--3.5
--3.0
--2.5
--2.0
--3
--2
5
°
C
Ta=
7
0
--0.5
--1.0
--1
VGS= --1.2V
--1.0
--0.5
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
--25
--1.5
°
C
25
°
C
--1.5
--2.0
IT14988
Drain-to-Source Voltage, VDS -- V
300
RDS(on) -- VGS
IT14987
180
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
--1.0A
--2.0A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID= --0.3A
160
140
120
100
80
60
40
20
10
--60
--40
--20
0
20
40
60
80
100
120
140
160
200
150
100
0.3A
= --
V, I D
--1.8
.0A
= --1
S=
I
VG
.0A
.5V, D
= --2
= --2
I
VGS
.5V, D
= --4
VGS
50
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
Gate-to-Source Voltage, VGS -- V
2
|
y
fs
|
-- ID
IT14989
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
Ambient Temperature, Ta --
°
C
IS -- VSD
IT14990
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS= --10V
VGS=0V
10
7
5
3
2
1.0
7
5
3
2
0.1
7
--0.01
5
°
C
--2
=
Ta
°
C
75
25
°
C
Source Current, IS -- A
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
7
5
SW Time -- ID
5 7 --10
IT14991
--0.01
0
--0.2
Ta=7
5
°
C
25
°
C
--25
°
C
--0.4
--0.6
--0.8
--1.0
--1.2
IT14992
VDD= --15V
VGS= --4.5V
Ciss, Coss, Crss -- pF
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
f=1MHz
Switching Time, SW Time -- ns
3
2
1000
7
5
3
2
td(off)
100
7
5
3
2
Ciss
tf
100
7
Coss
Crss
tr
10
7
5
--0.01
td(on)
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT14993
5
3
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
IT14994
No. A1553-3/7
MCH6342
--4.5
--4.0
--3.5
VGS -- Qg
VDS= --15V
ID= --4.5A
Drain Current, ID -- A
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
ASO
IDP= --18A
ID= --4.5A
Gate-to-Source Voltage, VGS -- V
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
1
2
3
4
5
6
7
8
9
ms
10
era
0
tio
ms
n(
Ta
=2
5
°
C)
Operation in this
area is limited by RDS(on).
DC
10
PW≤10μs
100
μ
1m
s
s
op
--0.01
--0.01 2 3
Ta=25°C
Single pulse
When mounted on ceramic substrate (1500mm
2
×0.8mm)
5 7--0.1
2 3
5 7--1.0
2 3
5 7 --10
2 3
5
Total Gate Charge, Qg -- nC
1.8
IT14995
PD -- Ta
Drain-to-Source Voltage, VDS -- V
IT14996
Allowable Power Dissipation, PD -- W
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
When mounted on ceramic substrate
(1500mm
2
×0.8mm)
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT14997
No. A1553-4/7
MCH6342
Taping Specification
MCH6342-TL-H
No. A1553-5/7
京公网安备 11010802033920号
EEWORLD
