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MT48H8M32LFF5-10IT

Description
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90
Categorystorage    storage   
File Size2MB,75 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
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MT48H8M32LFF5-10IT Overview

Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90

MT48H8M32LFF5-10IT Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeBGA
package instruction8 X 13 MM, VFBGA-90
Contacts90
Reach Compliance Codenot_compliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time7 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PBGA-B90
JESD-609 codee0
length13 mm
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals90
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX32
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA90,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)235
power supply1.8 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.00001 A
Maximum slew rate0.17 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
256Mb: x32 Mobile SDRAM
Features
Mobile SDRAM
MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks
For the latest data sheet, refer to Micron’s Web site:
www.micron.com/products/dram/mobile
Features
Low voltage power supply
Partial array self refresh power-saving mode
Temperature Compensated Self Refresh (TCSR)
Deep power-down mode
Programmable output drive strength
Fully synchronous; all signals registered on positive
edge of system clock
Internal pipelined operation; column address can
be changed every clock cycle
Internal banks for hiding row access/precharge
Programmable burst lengths: 1, 2, 4, 8, or full page
Auto precharge, includes concurrent auto
precharge, and auto refresh modes
Self-refresh mode; standard and low power
64ms, 4,096-cycle refresh
LVTTL-compatible inputs and outputs
Commercial and industrial temperature ranges
Supports CAS latency of 1, 2, 3
Options
• V
DD
/V
DD
Q
• 3.3V/3.3V
• 2.5V/2.5V
• 1.8V/1.8V
• Configurations
• 8 Meg x 32 (2 Meg x 32 x 4 banks)
• Package/Ballout
• 90-ball VFBGA (8mm x 13mm)
(Standard)
• 90-ball VFBGA (8mm x 13mm)
(Lead-free)
• Timing (Cycle Time)
• 7.5ns @ CL = 3 (133 MHz)
• 7.5ns @ CL = 2 (104 MHz)
• 8ns @ CL = 3 (125 MHz)
• 8ns @ CL = 2 (104 Mhz)
• 10ns @ CL = 3 (100 MHz)
• 10ns @ CL = 2 (83 Mhz)
• Operating Temperature Range
• Commercial (0° to +70°C)
• Industrial (-40°C to +85°C)
Marking
LC
V
H
8M32
F5
B5
-75
-75
-8
-8
-10
-10
None
IT
Table 1: Addressing
8 Meg x 32
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
2 Meg x 32 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
Table 2: Key Timing Parameters
CL = CAS (READ) latency
Speed
Grade
-75
-8
-10
-75
-8
-10
Clock
Frequency
133 MHz
125 MHz
100 MHz
133 MHz
104 MHz
83 MHz
Access Time
CL = 2
7ns
8ns
8ns
CL = 3
6ns
7ns
7ns
-
Setup
Time
2.5ns
2.5ns
2.5ns
2.5ns
2.5ns
2.5ns
Hold
Time
1ns
1ns
1ns
1ns
1ns
1ns
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_1.fm - Rev. G 6/05
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT48H8M32LFF5-10IT Related Products

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Description Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, VFBGA-90
Is it Rohs certified? incompatible conform to incompatible conform to conform to conform to incompatible
Maker Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code BGA BGA BGA BGA BGA BGA BGA
package instruction 8 X 13 MM, VFBGA-90 VFBGA, BGA90,9X15,32 8 X 13 MM, VFBGA-90 VFBGA, BGA90,9X15,32 VFBGA, BGA90,9X15,32 VFBGA, BGA90,9X15,32 8 X 13 MM, VFBGA-90
Contacts 90 90 90 90 90 90 90
Reach Compliance Code not_compliant unknown unknown unknown unknown unknown not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 7 ns 7 ns 7 ns 7 ns 7 ns 7 ns 7 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 100 MHz 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz 125 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON
interleaved burst length 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 code R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90
JESD-609 code e0 e1 e0 e1 e1 e1 e0
length 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm
memory density 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 32 32 32 32 32 32 32
Number of functions 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1
Number of terminals 90 90 90 90 90 90 90
word count 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000 8000000 8000000 8000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 70 °C 85 °C 70 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C - -40 °C - -40 °C -40 °C -40 °C
organize 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32 8MX32
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code VFBGA VFBGA VFBGA VFBGA VFBGA VFBGA VFBGA
Encapsulate equivalent code BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 235 260 235 260 260 260 235
power supply 1.8 V 3.3 V 3.3 V 2.5 V 2.5 V 3.3 V 1.8 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096 4096 4096 4096 4096
Maximum seat height 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
self refresh YES YES YES YES YES YES YES
Continuous burst length 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A 0.00001 A
Maximum slew rate 0.17 mA 0.255 mA 0.255 mA 0.255 mA 0.255 mA 0.255 mA 0.21 mA
Maximum supply voltage (Vsup) 1.9 V 3.6 V 3.6 V 2.7 V 2.7 V 3.6 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 3 V 3 V 2.3 V 2.3 V 3 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 3.3 V 3.3 V 2.5 V 2.5 V 3.3 V 1.8 V
surface mount YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb)
Terminal form BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 30 30 30 30 30
width 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm
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