APA2012
3W Mono Class-D Audio Power Amplifier
With Auto-Recovering Short-Circuit Protection
Features
•
•
•
•
Operating Voltage: 2.4V-6V
Low Supply Current
– I
DD
=1.8mA at V
DD
=5V
– I
DD
=1.5mA at V
DD
=3.6V
Low Shutdown Current
– I
DD
=0.1µA at V
DD
=5V
Output Power
at 1% THD+N
– 1.40W, at V
DD
=5V, R
L
=8Ω
– 0.74W, at V
DD
=3.6V, R
L
=8Ω
– 2.51W, at V
DD
=5V, R
L
=4Ω
– 1.32W, at V
DD
=3.6V, R
L
=4Ω
at 10% THD+N
– 1.8W, at V
DD
=5V, R
L
=8Ω
– 0.91W, at V
DD
=3.6V, R
L
=8Ω
– 3.2W, at V
DD
=5V, R
L
=4Ω
General Description
The APA2012 is a mono, filter-free Class-D audio ampli-
fier available in a WLCSP package. The gain can be set-
ting by external input resistance. High PSRR and differ-
ential architecture provide increased immunity to noise
and RF rectification. In addition to these features, a fast
startup time and small package size make the APA2012
an ideal choice for both cellular handsets and PDAs.
The APA2012 is capable of driving 1.3 W at 5 V or 600 mW
at 3.6 V into 8
Ω.
The APA2012 is also capable of driving
4
Ω.
The APA2012 is designed with a Class-D architec-
ture and operating with highly efficiency compared with
Class-AB amplifier. It's suitable for power sensitive
application, such as battery powered devices. The filter-
free architecture eliminates the output filter, reduces the
external component count, board area, and system costs,
and simplifies the design.
The APA2012 provides thermal and over circuit protection.
•
•
•
•
•
– 1.62W, at V
DD
=3.6V, R
L
=4Ω
Less External Components Required
Fast Startup Time (4ms)
High PSRR: 75 dB at 217 Hz
Short-Circuit and Thermal Protection
9-Ball, 1.2mm x 1.2 mm Pitch WLCSP
Simplified Application Circuit
Applications
•
•
•
•
Mobile Phones
Handsets
PDAs
Portable multimedia devices
APA2012
OUTN
INN
Input
Signal
INP
Bias
Circuitry
VON
VOP
OUTP
SHUTDOWN
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. A.3 - Oct., 2013
1
www.anpec.com.tw
APA2012
Pin Configuration
Top View
INP
(A1)
GND
(A2)
VON
(A3)
SD 1
8 VOP
7 PVDD
6 GND
5 VON
1.2mm
INN 2
VDD 3
INP 4
VDD
(B1)
PVDD
PGND
(B2)
(B3)
INN
(C1)
SD
(C2)
VOP
(C3)
TDFN3x3-8
(Top View)
1.2mm
WLCSP1.2x1.2-9
Ordering and Marking Information
APA2012
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
HA : WLCSP1.2x1.2-9 QB : TDFN3x3-8
Operating Ambient Temperature Range
I : -40 to 85
o
C
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APA2012 HA:
A2
X
APA
2012
X
X - Date Code
APA2012 QB:
X - Date Code
Note : ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which
are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for
MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen
free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by
weight).
Absolute Maximum Ratings
(Note 1)
(Over operating free-air temperature range unless otherwise noted.)
Symbol
V
DD
V
IN
, V
SD
T
J
T
STG
T
S
P
D
Parameter
Supply Voltage (VDD, PVDD)
Input Voltage (SD, INP, INN)
Maximum Junction Temperature
Storage Temperature Range
Soldering Temperature Range
Power Dissipation
Rating
-0.3 to 6.3
-0.3 to 3.6
150
-65 to +150
260
Internally Limited
Unit
V
V
ο
ο
ο
C
C
C
W
Note1: Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recom-
mended operating conditions" is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
Copyright
©
ANPEC Electronics Corp.
Rev. A.3 - Oct., 2013
2
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APA2012
Thermal Characteristics
Symbol
θ
JA
Parameter
Thermal Resistance -Junction to Ambient
(Note 2)
WLCSP1.2x1.2-9
TDFN3x3-8
165
60
Typical Value
Unit
ο
C/W
Note 3 : Please refer to “ Layout Recommendation”, the ThermalPad on the bottom of the IC should soldered directly to the PCB's
ThermalPad area that with several thermal vias connect to the ground plan, and the PCB is a 2-layer, 5-inch square area with 2oz
copper thickness.
Recommended Operating Conditions
Symbol
V
DD
V
IH
V
IL
T
A
T
J
Supply Voltage
High Level Threshold Voltage
Low Level Threshold Voltage
Ambient Temperature Range
Junction Temperature Range
SD
SD
Parameter
Range
2.4 ~ 3
1~3
0 ~ 0.35
-40 ~ 85
-40 ~ 125
o
Unit
V
C
Electrical Characteristics
V
DD
=5V, GND=0V, T
A
= 25
ο
C (unless otherwise noted)
Symbol
I
DD
I
IH
I
IL
I
SD
F
osc
Parameter
Supply Current
SD High-Level Input
Curent
SD High-Level Input
Curent
VDD shutdown supply
current
Oscillator Frequency
P-Channel
MOSFET
N-Channel
MOSFET
P-Channel
MOSFET
N-Channel
MOSFET
No load
SD = V
DD
SD = 0V
SD = 0V
Test Conditions
APA2012
Min.
-
-
-
-
-
-
-
-
-
-
285/R
in
-
-
Typ.
1.8
50
1
1
300
200
200
220
220
1
300/R
in
170
4
Max.
-
-
-
2
-
-
-
mΩ
-
-
5
315/R
in
-
-
mV
V/V
o
Unit
mA
µA
µA
µA
kHz
V
DD
= 5V
R
DSON
Static drain-source
on-state resistance
V
DD
= 3.6V
V
os
A
V
OTP
Tstart-up
Output Offset Voltage
Gain
Over Temperature
Protection
Start up time
INN and INP connect together, A
V
=2V/V
R
in
in kΩ
C
ms
Copyright
©
ANPEC Electronics Corp.
Rev. A.3 - Oct., 2013
3
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APA2012
Electrical Characteristics
V
DD
=5V, GND=0V, T
A
= 25
ο
C (unless otherwise noted)
Symbol
V
DD
=5V, T
A
=25°
C
THD+N = 1%,
f
in
= 1kHz
P
O
Output Power
THD+N = 10%,
f
in
= 1kHz
Total Harmonic Distortion
Pulse Noise
Power Supply Rejection
Ratio
Signal-to-noise ratio
Noise Output Voltage
R
L
= 4Ω
R
L
= 8Ω
R
L
= 4Ω
R
L
= 8Ω
R
L
= 4Ω
P
O
= 1.7W
-
-
-
1
-
-
-
-
-
2.51
1.41
3.2
1.8
0.1
0.1
75
90
55
-
-
-
-
-
%
-
-
-
-
dB
dB
µV
(rms)
W
Parameter
Test Conditions
APA2012
Min.
Typ.
Max.
Unit
THD+N
f
in
= 1kHz
PSRR
S/N
V
n
R
L
= 8Ω
P
O
= 0.9W
Inputs AC floating, V
PP
=200mV ripple,
f = 217Hz
With A-weighted Filter P
O
=0.43W, R
L
=8Ω
Inputs AC grounded with C
i
=2µF, f=20Hz to
20kHz, A-weighting Filter
V
DD
=3.6V, T
A
=25°
C
THD = 1%
f = 1KHz
Po
Output Power
THD = 10%
f = 1KHz
R
L
= 4Ω
R
L
= 8Ω
R
L
= 4Ω
R
L
= 8Ω
R
L
= 4Ω
P
O
= 0.84W
-
-
-
-
-
-
-
-
-
1.32
0.74
1.62
0.91
0.1
0.1
75
90
55
-
-
-
-
-
%
-
-
-
-
dB
dB
µV
(rms)
W
THD+N
Total harmonic Distortion
Pulse Noise
Power Supply Rejection
Ratio
Signal-to-noise ratio
Noise Output Voltage
f=1KHz
PSRR
S/N
V
n
R
L
= 8Ω
P
O
= 0.4W
Inputs AC floating, V
PP
=200mV ripple,
f = 217Hz
With A-weighted Filter P
O
=0.43W, R
L
=8Ω
Inputs AC grounded with C
i
=2µF, f=20Hz to
20kHz, A-weighting Filter
Copyright
©
ANPEC Electronics Corp.
Rev. A.3 - Oct., 2013
4
www.anpec.com.tw
APA2012
Typical Operating Characteristics
THD+N vs. Output Power
10
10
THD+N vs. Output Power
V
DD
=3.6V
V
DD
=3.6V
THD+N (%)
THD+N (%)
1
V
DD
=5.5V
1
V
DD
=5.5V
0.1
V
DD
=5V
V
DD
=2.4V
0.01
0
1
2
3
0.1
fin=1kHz
Cin=0.1uF
Rin=150kΩ
R
L
=4Ω
4
0.01
0
V
DD
=5V
V
DD
=2.4V
fin=1kHz
Cin=0.1uF
Rin=150kΩ
R
L
=8Ω
1.6
2
2.4
0.4
0.8
1.2
Output Power (W)
Output Power (W)
THD+N vs. Frequency
1
Po=1.7W
THD+N vs. Frequency
1
Po=0.9W
THD+N (%)
THD+N (%)
0.1
0.1
Po=0.09W
Po=0.8W
Po=0.17W
Po=0.45W
0.01
V
DD
=5V
Cin=0.1uF
Rin=150kΩ
R
L
=4Ω
0.01
V
DD
=5V
Cin=0.1uF
Rin=150kΩ
R
L
=8Ω
0.001
20
100
1k
Frequency (Hz)
10k 20k
0.001
20
100
1k
Frequency (Hz)
10k 20k
Frequence Response
+10
+300
Output Noise Voltage vs.
Frequency
85µ
Output Noise Voltage(µV)
+200
+100
Phase(Deg)
+8
75µ
Cin=0.1uF
Rin=150kΩ
R
L
=4Ω
Input Short to GND
A-weighting
V
DD
=2.4V
Gain(dB)
+6
+0
+4
V
DD
=5V
Cin=0.1uF
Rin=150kΩ
R
L
=4Ω
Po=2.1W
65µ
V
DD
=3.6V
-100
-200
-300
-400
10k
50k
55µ
50µ
V
DD
=5V
+2
+0
V
DD
=5.5V
45µ
20
100
1k
Frequency (Hz)
5
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20
100
1k
Frequency (Hz)
10k 20k
Copyright
©
ANPEC Electronics Corp.
Rev. A.3 - Oct., 2013
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