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CY7C1512KV18-200BZI

Description
QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Categorystorage    storage   
File Size740KB,31 Pages
ManufacturerCypress Semiconductor
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CY7C1512KV18-200BZI Overview

QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

CY7C1512KV18-200BZI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerCypress Semiconductor
Parts packaging codeBGA
package instruction13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)200 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density75497472 bit
Memory IC TypeQDR SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)220
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.4 mm
Minimum standby current1.7 V
Maximum slew rate0.55 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
72-Mbit QDR II SRAM 2-Word
Burst Architecture
Features
CY7C1510KV18, CY7C1525KV18
CY7C1512KV18, CY7C1514KV18
®
Configurations
CY7C1510KV18 – 8M x 8
CY7C1525KV18 – 8M x 9
CY7C1512KV18 – 4M x 18
CY7C1514KV18 – 2M x 36
Separate Independent Read and Write Data Ports
Supports concurrent transactions
333 MHz Clock for High Bandwidth
2-word Burst on all Accesses
Double Data Rate (DDR) Interfaces on both Read and Write
Ports (data transferred at 666 MHz) at 333 MHz
Two Input Clocks (K and K) for precise DDR Timing
SRAM uses rising edges only
Two Input Clocks for Output Data (C and C) to minimize Clock
Skew and Flight Time mismatches
Echo Clocks (CQ and CQ) simplify Data Capture in High Speed
Systems
Single Multiplexed Address Input bus latches Address Inputs
for both Read and Write Ports
Separate Port Selects for Depth Expansion
Synchronous internally Self-timed Writes
QDR
®
II operates with 1.5 Cycle Read Latency when DOFF is
asserted HIGH
Operates similar to QDR I Device with 1 Cycle Read Latency
when DOFF is asserted LOW
Available in x8, x9, x18, and x36 Configurations
Full Data Coherency, providing Most Current Data
Core V
DD
= 1.8V (±0.1V); I/O V
DDQ
= 1.4V to V
DD
Supports both 1.5V and 1.8V I/O supply
Available in 165-ball FBGA Package (13 x 15 x 1.4 mm)
Offered in both Pb-free and non Pb-free Packages
Variable Drive HSTL Output Buffers
JTAG 1149.1 Compatible Test Access Port
Phase Locked Loop (PLL) for Accurate Data Placement
Functional Description
The CY7C1510KV18, CY7C1525KV18, CY7C1512KV18, and
CY7C1514KV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR II architecture. QDR II architecture consists
of two separate ports: the read port and the write port to access
the memory array. The read port has dedicated data outputs to
support read operations and the write port has dedicated data
inputs to support write operations. QDR II architecture has
separate data inputs and data outputs to completely eliminate
the need to “turnaround” the data bus that exists with common
I/O devices. Access to each port is through a common address
bus. Addresses for read and write addresses are latched on
alternate rising edges of the input (K) clock. Accesses to the
QDR II read and write ports are completely independent of one
another. To maximize data throughput, both read and write ports
are equipped with DDR interfaces. Each address location is
associated with two 8-bit words (CY7C1510KV18), 9-bit words
(CY7C1525KV18), 18-bit words (CY7C1512KV18), or 36-bit
words (CY7C1514KV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus turnarounds.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Table 1. Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
x8
x9
x18
x36
333 MHz
333
790
790
810
990
300 MHz
300
730
730
750
910
250 MHz
250
640
640
650
790
200 MHz
200
540
540
550
660
167 MHz
167
480
480
490
580
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-00436 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised October 28, 2009
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CY7C1512KV18-200BZI Related Products

CY7C1512KV18-200BZI
Description QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Is it Rohs certified? incompatible
Maker Cypress Semiconductor
Parts packaging code BGA
package instruction 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Contacts 165
Reach Compliance Code compliant
ECCN code 3A991.B.2.A
Maximum access time 0.45 ns
Other features PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK) 200 MHz
I/O type SEPARATE
JESD-30 code R-PBGA-B165
JESD-609 code e0
length 15 mm
memory density 75497472 bit
Memory IC Type QDR SRAM
memory width 18
Humidity sensitivity level 3
Number of functions 1
Number of terminals 165
word count 4194304 words
character code 4000000
Operating mode SYNCHRONOUS
Maximum operating temperature 85 °C
Minimum operating temperature -40 °C
organize 4MX18
Output characteristics 3-STATE
Package body material PLASTIC/EPOXY
encapsulated code LBGA
Encapsulate equivalent code BGA165,11X15,40
Package shape RECTANGULAR
Package form GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Celsius) 220
power supply 1.5/1.8,1.8 V
Certification status Not Qualified
Maximum seat height 1.4 mm
Minimum standby current 1.7 V
Maximum slew rate 0.55 mA
Maximum supply voltage (Vsup) 1.9 V
Minimum supply voltage (Vsup) 1.7 V
Nominal supply voltage (Vsup) 1.8 V
surface mount YES
technology CMOS
Temperature level INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb)
Terminal form BALL
Terminal pitch 1 mm
Terminal location BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED
width 13 mm

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