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Datasheet> All Categories > storage> storage> BS62LV4006TA70
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BS62LV4006TA70

Description
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, TSOP-32
Categorystorage    storage   
File Size393KB，12 Pages
ManufacturerBrilliance
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BS62LV4006TA70 Overview

Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, TSOP-32

BS62LV4006TA70 Parametric

Parameter NameAttribute value
MakerBrilliance
Parts packaging codeTSOP
package instructionTSOP1,
Contacts32
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time70 ns
JESD-30 codeR-PDSO-G32
length18.4 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.4 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
width8 mm

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Very Low Power CMOS SRAM
512K X 8 bit
Green package materials are compliant to RoHS
Automotive Grade
BS62LV4006
n
FEATURES
Ÿ
Wide V
CC
operation voltage : 2.4V ~ 5.5V
Ÿ
Very low power consumption :
V
CC
= 3.0V
Operation current : 25mA (Max.) at 70ns
2mA (Max.) at 1MHz
Standby current : 0.25uA (Typ.) at 25
O
C
V
CC
= 5.0V
Operation current : 60mA (Max.) at 70ns
10mA (Max.) at 1MHz
Standby current : 1.5uA (Typ.) at 25
O
C
Ÿ
High speed access time :
-70
70ns (Max.) at V
CC
=2.7~5.5V
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE and OE options
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation
Ÿ
Data retention supply voltage as low as 1.5V
n
DESCRIPTION
The BS62LV4006 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.25uA at 3.0V/25
O
C and maximum access time of 70ns at
2.7V/125
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE), and active LOW output enable (OE) and three-state output
drivers.
The BS62LV4006 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62LV4006 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 600mil Plastic DIP, 400mil TSOP-II,
8mmx13.4mm STSOP and 8mmx20mm TSOP package.
n
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BS62LV4006EA
BS62LV4006HA
BS62LV4006PA
BS62LV4006SA
BS62LV4006STA
BS62LV4006TA
Automotive
Grade
O
-40 C to +125
O
C
1.5uA
0.25uA
50uA
25uA
10mA
60mA
2mA
25mA
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Typ.)
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5.0V
V
CC
=3.0V
V
CC
=5V
1MHz
f
Max.
V
CC
=3V
1MHz
f
Max.
TSOP II-32
BGA-36-0608
PDIP-32
SOP-32
STSOP-32
TSOP-32
n
PIN CONFIGURATIONS
n
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
BLOCK DIAGRAM
A12
A14
A16
A18
A15
A17
A13
A8
A9
A11
•
BS62LV4006TA
BS62LV4006STA
1
2
A1
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 4096
4096
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
8
Data
Input
Buffer
8
256
Column Decoder
9
CE
WE
OE
Control
Address Input Buffer
8
Column I/O
Write Driver
Sense Amp
3
NC
4
A3
5
A6
6
A8
8
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
•
BS62LV4006EA
BS62LV4006SA
BS62LV4006PA
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A
A0
Data
Output
Buffer
B
DQ4
A2
WE
A4
A7
DQ0
C
DQ5
NC
A5
DQ1
D
VSS
VCC
E
VCC
VSS
V
CC
GND
A7 A6 A5 A4 A3 A2 A1 A0 A0
F
DQ6
A18
A17
DQ2
G
DQ7
OE
CE
A16
A15
DQ3
H
A9
A10
A11
A12
A13
A14
36-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
R0201-BS62LV4006A
1
Revision 1.3A
Mar.
2006

BS62LV4006TA70 Related Products

BS62LV4006TA70 BS62LV4006EAG70 BS62LV4006STA70 BS62LV4006SAG70 BS62LV4006EA70 BS62LV4006SA70 BS62LV4006STAG70 BS62LV4006TAG70 BS62LV4006PA70 BS62LV4006PAG70
Description Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, TSOP-32 Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.400 INCH, GREEN, MS-024, TSOP2-32 Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP-32 Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.450 INCH, GREEN, PLASTIC, SOP-32 Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.400 INCH, MS-024, TSOP2-32 Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOP-32 Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, GREEN, STSOP-32 Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, GREEN, TSOP-32 Standard SRAM, 512KX8, 70ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 Standard SRAM, 512KX8, 70ns, CMOS, PDIP32, 0.600 INCH, GREEN, PLASTIC, DIP-32
Maker Brilliance Brilliance Brilliance Brilliance Brilliance Brilliance Brilliance Brilliance Brilliance Brilliance
Parts packaging code TSOP TSSOP2 TSOP SOIC TSSOP2 SOIC TSOP TSOP DIP DIP
package instruction TSOP1, TSOP2, TSOP1, SOP, TSOP2, SOP, TSOP1, TSOP1, DIP, DIP,
Contacts 32 32 32 32 32 32 32 32 32 32
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknow unknow
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns 70 ns
JESD-30 code R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDIP-T32 R-PDIP-T32
length 18.4 mm 20.95 mm 11.8 mm 20.447 mm 20.95 mm 20.447 mm 11.8 mm 18.4 mm 41.91 mm 41.91 mm
memory density 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bi 4194304 bi
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1 1 1 1 1
Number of terminals 32 32 32 32 32 32 32 32 32 32
word count 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
character code 512000 512000 512000 512000 512000 512000 512000 512000 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
organize 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP1 TSOP2 TSOP1 SOP TSOP2 SOP TSOP1 TSOP1 DIP DIP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V 2.4 V
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
surface mount YES YES YES YES YES YES YES YES NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal pitch 0.5 mm 1.27 mm 0.5 mm 1.27 mm 1.27 mm 1.27 mm 0.5 mm 0.5 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
width 8 mm 10.16 mm 8 mm 11.303 mm 10.16 mm 11.303 mm 8 mm 8 mm 15.24 mm 15.24 mm
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 2.997 mm 1.2 mm 2.997 mm 1.2 mm 1.2 mm - -
Base Number Matches - 1 1 1 1 1 1 - - -

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