DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
BC549; BC550
NPN general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 22
2004 Oct 11
NXP Semiconductors
Product data sheet
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
Low noise stages in audio frequency equipment.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC559 and BC560.
1
handbook, halfpage
BC549; BC550
PINNING
PIN
1
2
3
emitter
base
collector
DESCRIPTION
2
3
3
2
1
MAM182
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC549C
BC550C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BC549
BC550
V
CEO
collector-emitter voltage
BC549
BC550
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Oct 11
2
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
30
45
5
100
200
200
500
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
30
50
V
V
MIN.
MAX.
UNIT
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
NXP Semiconductors
Product data sheet
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; see Fig.2
I
C
= 10
μA
I
C
= 2 mA
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA; note 1
I
C
= 100 mA; I
B
= 5 mA; note 1
V
CE
= 5 V; I
C
= 2 mA; note 2
V
CE
= 5 V; I
C
= 10 mA; note 2
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
EB
= 0.5 V; I
C
= i
c
= 0 A;
f = 1 MHz
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
V
CE
= 5 V; I
C
= 200
μA;
R
S
= 2 kΩ; f = 10 Hz to 15.7 kHz
V
CE
= 5 V; I
C
= 200
μA;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
Notes
1. V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
2. V
BE
decreases by about 2 mV/K with increasing temperature.
−
420
−
−
−
−
580
−
−
−
100
−
−
MIN.
−
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BC549; BC550
VALUE
250
UNIT
K/W
TYP.
−
−
−
270
520
90
200
700
900
660
−
1.5
11
−
−
−
MAX.
15
5
100
−
800
250
600
−
−
700
770
−
−
−
4
4
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
dB
2004 Oct 11
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BC549; BC550
handbook, full pagewidth
600
MBH725
VCE = 5 V
hFE
400
200
0
10
−2
10
−1
1
10
10
2
IC (mA)
10
3
BC549C; BC550C.
Fig.2 DC current gain; typical values.
2004 Oct 11
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BC549; BC550
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.55
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L
1(1)
max.
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
JEITA
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
2004 Oct 11
5
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