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SHF1306ATXV

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETICALLY SEALED, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size137KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SHF1306ATXV Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETICALLY SEALED, 2 PIN

SHF1306ATXV Parametric

Parameter NameAttribute value
MakerSSDI
package instructionHERMETICALLY SEALED, 2 PIN
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-GALF-W2
Maximum non-repetitive peak forward current75 A
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialCERAMIC, GLASS-SEALED
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.04 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHF1304 thru SHF1308
SHF1304SMS thru SHF1308SMS
3 AMP, 400 – 800 Volts
40 - 50 nsec, Hyper Fast Rectifier
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SHF130 _6_ __ __ __
L
= None
or TX , TXV, S
L
Package
= Axial
SMS = Surface Mount
L
Lead Dia
= .050" standard
A = .040" special order
Voltage
4 = 400 V
6 = 600 V
8 = 800 V
L
Processing
Features:
Hyper Fast Recovery: 40 - 50 nsec
PIV to 800 Volts
Hermetically Sealed
Void Free Construction
For High Efficiency Applications
Low Reverse Leakage
Single Chip Construction
Replaces UES 1304 Types
Axial Leaded
Surface Mount (SMS)
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25ºC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, T
A
= 25ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Lead, L = 3/8 "
Junction to End Tab
Symbol
SHF1304
SHF1306
SHF1308
V
RRM
V
R
Io
Value
400
600
800
3.0
Units
Volts
Amps
I
FSM
Top & Tstg
R
θJL
R
θJE
75
-65 to +175
20
14
Amps
ºC
ºC/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0101C
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