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UPD4416016G5-A15-9JF

Description
16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
File Size82KB,12 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPD4416016G5-A15-9JF Overview

16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT

DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD4416016
16M-BIT CMOS FAST SRAM
1M-WORD BY 16-BIT
Description
The
µ
PD4416016 is a high speed, low power, 16,777,216 bits (1,048,576 words by 16 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
±
0.3 V.
The
µ
PD4416016 is packaged in a 54-pin plastic TSOP (II).
Features
1,048,576 words by 16 bits organization
Fast access time : 15, 17 ns (MAX.)
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
Output Enable input for easy application
Ordering Information
Part number
Package
Supply voltage
V
Access time
ns (MAX.)
15
17
Supply current mA (MAX.)
At operating
250
240
At standby
10
µ
PD4416016G5-A15-9JF
µ
PD4416016G5-A17-9JF
54-PIN PLASTIC TSOP (II)
(10.16 mm (400))
3.3
±
0.3
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14081EJ5V0DS00 (5th edition)
Date Published December 2000 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
1999

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Description 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT 16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
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