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UPD43257B

Description
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
File Size102KB,20 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPD43257B Overview

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD43257B
256K-BIT CMOS STATIC RAM
32K-WORD BY 8-BIT
Description
The
µ
PD43257B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.
Battery backup is available. And the
µ
PD43257B has two chip enable pins (/CE1, CE2) to extend the capacity.
The
µ
PD43257B is packed in 28-pin plastic DIP and 28-pin plastic SOP.
Features
32,768 words by 8 bits organization
Fast access time: 70, 85 ns (MAX.)
Low V
CC
data retention: 2.0 V (MIN.)
Two Chip Enable inputs: /CE1, CE2
Part number
Access time
ns (MAX.)
Operating supply Operating ambient
voltage
V
temperature
°C
0 to 70
At operating
mA (MAX.)
45
45
Supply current
At standby
At data retention
µ
A (MAX.)
50
15
µ
A (MAX.)
Note
3
2
µ
PD43257B-xxL
µ
PD43257B-xxLL
70, 85
4.5 to 5.5
Note
T
A
40
°C,
V
CC
= 3.0 V
Version X
This Data sheet can be applied to the version X. This version is identified with its lot number. Letter X in the fifth
character position in a lot number signifies version X.
JAPAN
D43257B
X
Lot number
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M10693EJ7V0DS00 (7th edition)
Date Published June 2000 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
©
1992

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