EEWORLDEEWORLDEEWORLD

Part Number

Search

BZT55C11-7

Description
Zener Diode, 11V V(Z), 5.45%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, QUADROMELF-2
CategoryDiscrete semiconductor    diode   
File Size66KB,3 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

BZT55C11-7 Overview

Zener Diode, 11V V(Z), 5.45%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, QUADROMELF-2

BZT55C11-7 Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage11 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance5.45%
Working test current5 mA
BZT55C2V4 - BZT55C75
500mW SURFACE MOUNT ZENER DIODE
Features
·
·
·
·
·
500mW Power Dissipation
High Stability
Low Noise
Outline Similar to JEDEC 213AA
Hemetic Package
A
B
Mechanical Data
·
·
·
·
·
Case: QuadroMELF, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Cathode Band Only
Weight: 0.034 grams (approx.)
QuadroMELF
Dim
A
B
C
D
Min
3.3
1.4
Max
3.7
1.6
1.7Æ Typical
0.3 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
Power Dissipation
Zener Current
Thermal Resistance, Junction to Ambient Air
Forward Voltage
Operating and Storage Temperature Range
(Note 1)
(Note 1)
(Note 1)
P
d
I
Z
R
qJA
V
F
@ T
A
= 25°C unless otherwise specified
Value
500
P
d
/V
Z
300
1.5
-65 to +175
Unit
mW
mA
K/W
V
°C
Symbol
@ I
F
= 200mA
T
j,
T
STG
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
2. Tested with pulses, T
p
£
100ms.
DS30006 Rev. C-2
1 of 3
C
D
BZT55C2V4-BZT55C75

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1959  2699  1709  2829  1664  40  55  35  57  34 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号