Low V
F
SMD Schottky Barrier Rectifiers
CDBZ31045
L
-HF
Reverse Voltage: 45 Volts
Forward Current: 10 Amp
RoHS Device
Halogen free
Features
-Lead less chip form, no lead damage.
-Low power loss, High efficiency.
-High current capability, low VF.
-Plastic package has Underwriters Laboratory
Flammability Classification 94V-0 .
0.262(6.65)
0.250(6.35)
TO-277(Z3)
Top View
0.085(2.15)
0.073(1.85)
Bottom View
0.132(3.35)
0.120(3.05)
0.187(4.75)
0.175(4.45)
0.163(4.15)
0.152(3.85)
0.061(1.55)
0.049(1.25)
Mechanical data
-Case: Packed with FRP substrate and epoxy underfilled.
-Terminals: Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, method 2026.
0.047(1.20)
0.035(0.90)
0.045(1.15)
0.033(0.85)
0.053(1.35)
0.041(1.05)
Circuit Diagram
LEFT PIN
RIGHT PIN
BOTTOMSIDE
HEAT SINK
Dimensions in inches and (millimeter)
Maximum Ratings
(at TA=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Average forward current
Peak forward surge current (8.3ms single half sine-wave)
Operating and storage temperature range
Symbol
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
Rating
45
10
200
-55 to +150
Unit
V
A
A
°C
Electrical Characteristics
(at TA=25°C unless otherwise noted)
Parameter
Forward voltage (NOTE 1)
Repetitive peak reverse current
Symbol
V
F
I
R
R
θJA
@ I
F
= 10 A
Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 100°C
Min.
Typ.
0.43
0.42
0.12
15
122
18
Max.
0.46
-
0.35
50
Unit
V
mA
°C/W
°C/W
@ V
R
= Max. V
RRM
Junction to ambient (NOTE 2)
Junction to case (NOTE 2)
Thermal resistance
R
θJC
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C.B. with (3.36x4.86mm & 1.39*1.4mm )copper pad areas.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JL030
REV:A
Page 1
Comchip Technology CO., LTD.
Low V
F
SMD Schottky Barrier Rectifiers
RATING AND CHARACTERISTIC CURVES (CDBZ31045
L
-HF)
Fig.1 - Typical Forward Current
Derating Curve
14
12
10
Fig.2 - Typical Instantaneous
Forward Characteristics
50
Instantaneous Forward Current, (A)
Average Forward Current, (A)
10
8
6
4
2
0
0
25
50
75
100
125
150
175
1
0.1
T
J
= 150°C
T
J
= 125°C
T
J
= 100°C
T
J
= 25°C
0.01
0
0.1
0.2
0.3
0.4
0.5
Case Temperature, (°C)
Instantaneous Forward Voltage, (V)
Fig.3 - Maximum Non-repetitive Peak
Forward Surge Current
300
Fig.4 - Typical Reverse Characteristics
100
Peak Forward Surge Current, (A)
T
J
=25°C
8.3ms single half sine
wave, JEDEC method
TJ=150°C
TJ=125°C
200
Instantaneous Reverse
Leakage Current, (mA)
10
T
J
=100°C
1
0.1
100
0.01
T
J
=25°C
0
1
10
100
0.001
0
20
40
60
80
100
Number of Cycles at 60Hz
Percent of Rated Peak Reverse Voltage, (%)
Company reserves the right to improve product design , functions and reliability without notice.
QW-JL030
REV:A
Page 2
Comchip Technology CO., LTD.
Low V
F
SMD Schottky Barrier Rectifiers
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
P
A
W
C
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
A
4.25 ± 0.10
0.167 ± 0.004
SYMBOL
B
6.80 ± 0.10
0.268 ± 0.004
C
1.45 ± 0.10
0.057 ± 0.004
d
1.50 ± 0.10
0.059 ± 0.004
D
330 ± 2.00
12.992 ± 0.079
D
1
50.0 MIN.
1.969 MIN.
D
2
13.0 ± 0.50
0.512 ± 0.020
TO-277(Z3)
(mm)
(inch)
SYMBOL
E
1.75 ± 0.10
0.069 ± 0.004
F
5.50 ± 0.05
0.217 ± 0.002
P
8.00 ± 0.10
0.315 ± 0.004
P
0
4.00 ± 0.10
0.157 ± 0.004
P
1
2.00 ± 0.10
0.079 ± 0.004
W
12.00 ± 0.30
0.472 ± 0.012
W
1
14.4 MAX.
0.567 MAX.
TO-277(Z3)
(mm)
(inch)
Company reserves the right to improve product design , functions and reliability without notice.
QW-JL030
REV:A
Page 3
Comchip Technology CO., LTD.
Low V
F
SMD Schottky Barrier Rectifiers
Marking Code
Z3PK
1045U
Suggested PAD Layout
0.191 (4.86)
MIN.
0.132 (3.36)
MAX.
0.280 (7.11)
REF.
0.055 (1.40)
MIN.
0.072 (1.84)
MAX.
0.055 (1.39)
MIN.
Standard Packaging
REEL PACK
Case Type
REEL
( pcs )
Reel Size
(inch)
TO-277(Z3)
5,000
13
Company reserves the right to improve product design , functions and reliability without notice.
QW-JL030
REV:A
Page 4
Comchip Technology CO., LTD.
Power technology
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